Segmented ESD Protection Layout for Low-Leakage MOSFET Terminals
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Solution Overview
Problem
Conventional semiconductor devices, such as MOSFETs, are prone to Electrostatic Discharge (ESD) failures including junction damage, gate oxide damage, and metallization burnout, which are thermally induced and result in high leakage currents and structural failures.
Innovation Solution
An ESD protection semiconductor device is integrated into the semiconductor body, featuring elongated ESD regions with multiple diode regions and isolated floating strips, which provide effective connections between diode regions, reducing the active area and minimizing leakage current, and is designed to be aligned with the semiconductor device's terminals to enhance protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional ESD protection devices are used, then ESD protection is provided, but leakage current increases and active area decreases
Solution Approach 1:
The ESD protection device is segmented into multiple diode regions (first, second, third, and fourth diode regions) arranged in a specific pattern. This segmentation allows the device to distribute the ESD protection function across multiple smaller units, reducing the leakage current path and minimizing the impact on active area while maintaining effective ESD protection capability.
2Reliability
If traditional ESD protection devices are used, then ESD protection is provided, but active area decreases
Solution Approach 1:
The ESD protection device utilizes a vertical dimension by extending diode regions from the first major surface into the semiconductor body. This three-dimensional arrangement allows the ESD protection function to be achieved without proportionally increasing the planar footprint, thereby preserving more active area on the chip surface while maintaining effective ESD protection.
3Reliability
If diode regions are spaced apart, then ESD protection effectiveness improves, but device complexity increases
Solution Approach 1:
The ESD protection device merges multiple diode regions into a unified structure with shared connections. The first and second diode regions share the floating terminal, and the third and fourth diode regions share another floating terminal, reducing the overall complexity compared to completely separate diode structures while maintaining effective ESD protection through the spaced-appart arrangement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces leakage current to nanoAmpere levels, provides robust ESD protection by minimizing the diode span, and maintains the functionality of the semiconductor device by isolating the ESD protection structure from the main device, thus preventing thermal-induced failures.
Implementation Method 1
An Electrostatic Discharge, ESD, protection semiconductor device for providing ESD protection between a first and a second terminal of another semiconductor device
Implementation Method 2
a first diode region of a second conductivity type, wherein the first diode region is connected to the first ESD terminal; a second diode region of the second conductivity type, spaced apart from said first diode region
Data Source
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AI summary
An Electrostatic Discharge, ESD, protection semiconductor device for providing ESD protection between a first and a second terminal of another semiconductor device, the ESD protection device comprising a semiconductor body having a first major surface, wherein the semiconductor device further comprises a first ESD terminal arranged to be connected to a first terminal of the other semiconductor device, a second ESD terminal arranged to be connected to a second terminal of the other semiconductor device, and a floating terminal.