Segmented GAA Gate Structure With Dielectric Isolation Alignment
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Solution Overview
Problem
The integration of multi-gate devices in semiconductor manufacturing is challenging due to increased complexity and misalignment issues during the fabrication process, which hinders the development of smaller, faster, and more complex electronic devices.
Innovation Solution
The use of gate-all-around (GAA) transistor structures with dielectric features to separate gate structures into portions, allowing for self-aligned formation and reduced device size, and a metal layer to reconnect specific portions of the gate structure, eliminating the need for precise alignment and simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multi-gate devices are integrated to improve gate control and reduce OFF-state current, then device performance is improved, but fabrication complexity and misalignment issues increase
Solution Approach 1:
The gate structure is divided into multiple segments separated by dielectric features, allowing each segment to be formed independently through self-aligned processes. This segmentation enables complex multi-gate devices to be fabricated using simpler, more reliable self-aligned techniques rather than requiring precise multi-step alignment processes.
Solution Approach 2:
Dielectric features are introduced as vertical structures extending through the gate, adding a third dimension to the gate architecture. This dimensional change enables separation of gate segments while maintaining horizontal connectivity through metal layers, solving the alignment problem by working in multiple dimensions rather than attempting precise 2D alignment.
2Productivity
If device dimensions are scaled down to improve production efficiency and lower costs, then productivity is improved, but manufacturing process complexity increases
Solution Approach 1:
Dielectric features are formed in advance before gate patterning, establishing predetermined separation zones that guide subsequent self-aligned fabrication steps. This preliminary action simplifies the overall manufacturing process by pre-defining the gate segment locations, allowing smaller devices to be fabricated without proportionally increasing process complexity.
3Length of moving object
If dielectric features are used to separate gate structures into portions, then device size is reduced and misalignment risks are minimized, but device structure complexity increases
Solution Approach 1:
Dielectric features act as intermediary elements between gate segments, providing physical separation and electrical isolation while allowing controlled connectivity through metal layers. These intermediary structures enable compact device design by mediating the relationship between separated gate portions, reducing the need for large spacing while maintaining functional independence.
Solution Approach 2:
Multiple gate segments separated by dielectric features are electrically connected through metal layers, merging their functionality into a unified gate structure. This combining approach allows the device to achieve both the size reduction benefits of segmentation and the functional performance of integrated gates, balancing size and complexity.
Data Source
AI summary
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate and nanostructures formed over the substrate. The semiconductor structure also includes a gate structure wrapping around the nanostructures and a first dielectric feature separating the gate structure into a first portion and a second portion. The semiconductor structure also includes a metal layer formed over the gate structure. In addition, top surfaces of the first portion and the second portion of the gate structure and a top surface of the first dielectric feature are covered by the metal layer.