Segmented Gate Contact and Via Structure for Lower Resistance
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Solution Overview
Problem
The scaling down of semiconductor devices increases complexity and contact resistance due to defects like voids and seams in gate via structures, which are challenging to address with traditional manufacturing processes.
Innovation Solution
Forming gate contact and via structures as separate entities in distinct deposition and growth processes, with the gate contact structure acting as a seed layer and growth promoter for the gate via structure, reducing the aspect ratio of the contact opening and minimizing defects, thereby reducing contact resistance by 10% to 50%.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional manufacturing processes are used to form gate via structures, then the devices can be manufactured with standard processes, but defects like voids and seams occur leading to increased contact resistance
Solution Approach 1:
The gate contact structure is segmented into two distinct parts: a gate contact structure formed first, and a gate via structure formed subsequently on top of it. This segmentation allows each structure to be optimized independently, with the contact structure providing a defect-free interface and the via structure providing the vertical connection, thereby reducing overall contact resistance and eliminating voids that would occur in a monolithic structure
Solution Approach 2:
The gate contact structure is formed in advance before the gate via structure. This preliminary action creates a prepared interface that promotes proper adhesion and reduces the aspect ratio for subsequent via formation, preventing void formation and ensuring low contact resistance from the outset
2Reliability
If gate contact and via structures are formed as separate entities in distinct processes, then contact resistance is reduced by 10% to 50%, but the manufacturing process complexity increases
Solution Approach 1:
The gate contact structure serves multiple functions: it acts as the electrical contact interface, provides a seed layer for via growth, and reduces the aspect ratio for subsequent via formation. By combining these functions into a single preliminary structure, the process achieves low contact resistance without proportionally increasing complexity
3Manufacturing precision
If the aspect ratio of contact opening is reduced, then defects like voids and seams are minimized, but the contact opening dimensions are constrained
Solution Approach 1:
By segmenting the contact and via structures, the contact opening can be optimized for low aspect ratio (improving manufacturing precision) while the via structure extends vertically to provide the necessary connection, thus maintaining design flexibility without compromising defect minimization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces gate contact resistance by minimizing defects and improving the electrical connection between gate structures and contact structures, enhancing the performance and reliability of semiconductor devices.
Implementation Method 1
Forming gate contact and via structures as separate entities in distinct deposition and growth processes
Data Source
AI summary
A semiconductor device and methods of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure disposed on the substrate, a source/drain (S/D) region disposed on the fin structure, and a gate structure disposed on the fin structure adjacent to the S/D region. The gate structure includes a gate stack disposed on the fin structure and a gate capping structure disposed on the gate stack. The gate capping structure includes a conductive gate cap disposed on the gate stack and an insulating gate cap disposed on the conductive gate cap. The semiconductor device further includes a first contact structure disposed within the gate capping structure and a first via structure disposed on the first contact structure.