Segmented Gate Electrode Structure for Display Apparatus
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Solution Overview
Problem
Existing display technologies face challenges in achieving high display quality and minimizing dimensional errors during the manufacturing process of organic light emitting display apparatuses, particularly in the formation of electrodes and insulating layers, which can lead to reduced light transmission and display efficiency.
Innovation Solution
A display apparatus with a substrate, thin film transistor, and pixel structure that includes a semiconductor layer, insulating layers, and electrodes with specific conductive materials and layering configurations to prevent over-etching and ensure proper spacing, allowing for improved light transmission and reduced dimensional errors, thereby enhancing display quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional manufacturing processes are used for organic light emitting display apparatuses, then production cost is reduced, but dimensional errors increase and display quality deteriorates
Solution Approach 1:
The gate electrode is divided into multiple segments (first gate electrode, second gate electrode, third gate electrode) separated by insulating layers. This segmentation allows independent positioning and formation of each gate segment, preventing over-etching and reducing dimensional errors while maintaining manufacturing feasibility through sequential processing steps
Solution Approach 2:
Insulating layers are introduced as intermediary elements between the gate electrode segments and between the gate electrode and source/drain electrodes. These intermediary layers provide precise spacing control and prevent direct contact that could cause short circuits or dimensional inaccuracies, thereby improving manufacturing precision without significantly complicating the overall process
2Illumination intensity
If electrodes and insulating layers are formed without proper spacing, then manufacturing process is simplified, but over-etching occurs and light transmission decreases
Solution Approach 1:
The structure transitions from a planar two-dimensional layout to a three-dimensional stacked configuration with insulating layers positioned between electrode segments. This vertical stacking creates proper spacing without requiring larger lateral dimensions, preventing over-etching while maintaining compact device footprint and preserving light transmission pathways
Solution Approach 2:
Insulating layers are formed in advance between gate electrode segments before subsequent electrode formation steps. This preliminary action establishes precise spacing boundaries that prevent over-etching during later manufacturing steps, ensuring proper light transmission paths are maintained without requiring complex real-time control mechanisms
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively minimizes dimensional errors and increases light transmission, resulting in improved display quality by preventing over-etching and ensuring efficient light provision to the outside, thus overcoming the limitations of existing technologies.
Implementation Method 1
an organic light emitting layer on the first electrode
Data Source
AI summary
A display apparatus includes a thin film transistor provided on a substrate and a pixel electrically coupled to the thin film transistor. The thin film transistor includes a semiconductor layer on the substrate, a first insulating layer on the semiconductor layer and having a first contact hole and a second contact hole, a source electrode on the first insulating layer and making contact with the semiconductor layer through the first contact hole, a drain electrode on the first insulating layer and making contact with the semiconductor layer through the second contact hole, a gate electrode between the source electrode and the drain electrode and having a stacked structure including a first conductive layer and a second conductive layer, and a second insulating layer between the source electrode and the drain electrode and covering the gate electrode.