Segmented Gate TFT Structure for Low-Frequency Flicker Suppression

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Solution Overview

Problem

Display devices driven at low frequencies experience image deterioration and flicker due to leakage currents, which need to be reduced to maintain image information effectively.

Innovation Solution

A display device structure is designed with specific transistor configurations, including active layers, gate electrodes, and insulating layers, where the first active layer has a channel region between source and drain regions, and gate electrodes are positioned to strengthen the electric field, reducing leakage current through transistor aging processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If the display device is driven at a low frequency, then power consumption is reduced, but leakage current increases causing image deterioration and flicker

Engineering Contradiction:
Improvepower consumptionVSAvoidimage quality
Core Design Contradiction:
Use of energy by moving objectVSReliability

Solution Approach 1:

The gate electrode is divided into multiple segments (first gate electrode and second gate electrode) that can be independently controlled. This segmentation allows different voltage levels to be applied to different parts of the gate, enabling precise control of the transistor channel to reduce leakage current while maintaining low-frequency operation.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the gate electrode are assigned different electrical characteristics (different voltage levels). The first gate electrode region and second gate electrode region have different potentials, creating localized electric field variations that suppress leakage current in specific channel regions while maintaining overall device performance.

Inventive Principle:
Principle #3Local quality

2Device complexity

If the gate electrode structure is simplified, then device complexity is reduced, but leakage current control capability deteriorates

Engineering Contradiction:
Improvegate electrode structureVSAvoidleakage current control
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The gate electrode is segmented into multiple independent regions (first gate electrode and second gate electrode) that can be controlled separately. This segmentation enhances leakage current control capability by allowing differential voltage application, while the overall structure remains relatively simple and integrated.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The segmented gate electrode structure serves multiple functions: it controls the main current flow, suppresses leakage current, and enables low-frequency operation. The same structural elements perform both simple connectivity and complex electrical control functions.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The configuration strengthens transistor aging and reduces leakage current, enhancing the display's ability to maintain image information at low frequencies, thereby preventing image deterioration and flicker.

Implementation Method 1

gate electrodes are positioned to strengthen the electric field

Methodology Applied
Scientific EffectElectric field: Electric Field

Data Source

PatentUS12010872B2Display device
Publication Date: 2024.06.11 SAMSUNG DISPLAY CO LTD
  • US12010872B2 patent drawing
  • US12010872B2 patent drawing
  • US12010872B2 patent drawing

AI summary

A display device may include a substrate, a first active layer disposed on the substrate and including a first source region, a first drain region, and a first channel region disposed between the first source region and the first drain region, a first gate insulating layer covering the first active layer on the substrate, first gate electrodes disposed in opposite sides of the first channel region on the first gate insulating layer, a second gate insulating layer covering the first gate electrodes on the first gate insulating layer, a second gate electrode disposed in a central portion of the first channel region on the second gate insulating layer, and a first connection electrode disposed on the second gate electrode and connected to the first and second gate electrodes.