Optoelectronic Semiconductor Structure With Segmented Light Emission
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Solution Overview
Problem
Existing optoelectronic semiconductor devices face challenges in achieving high luminous efficiency and mechanical strength, particularly during the transferring process, due to insufficient mechanical strength and luminous efficiency variations with operating current density, as well as surface defects from miniaturization.
Innovation Solution
The design incorporates an epitaxial stack with a trench and concave portion, where the first portion acts as a supporting structure not participating in electrical conduction or light emission, enhancing current density and mechanical strength, and includes a contact structure and electrodes to optimize current conduction and light emission in the second portion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the optoelectronic semiconductor device is miniaturized to improve display application performance, then power consumption is reduced and reliability is improved, but mechanical strength is insufficient and surface defects increase
Solution Approach 1:
The epitaxial stack is divided into multiple portions (first portion and second portion) separated by a trench. The first portion serves as a supporting structure that does not emit light, while the second portion emits light. This segmentation provides mechanical support to compensate for the reduced mechanical strength caused by miniaturization, while maintaining the light-emitting function in the second portion.
2Productivity
If the operating current density is increased to improve luminous efficiency, then light output is enhanced, but luminous efficiency variations and structural damage occur
Solution Approach 1:
The device is segmented into a first portion (non-light-emitting support) and a second portion (light-emitting). By concentrating the light-emitting function in the second portion while providing mechanical support from the first portion, the device can operate at higher current densities to achieve high luminous efficiency without compromising structural integrity, as the first portion bears the mechanical stress.
Solution Approach 2:
Different portions of the epitaxial stack are assigned different functions: the first portion is optimized for mechanical support and electrical conduction without light emission, while the second portion is optimized for light emission. This local differentiation allows the light-emitting region to operate at high current density for high luminous efficiency while the support region maintains structural integrity.
3Use of energy by moving object
If the device size is reduced to improve display performance, then power consumption is reduced, but surface defects from miniaturization increase
Solution Approach 1:
The epitaxial stack is segmented into a first portion and a second portion separated by a trench. The first portion acts as a supporting structure that does not emit light, providing a stable foundation that reduces surface defects. The second portion contains the active light-emitting structures with reduced area, minimizing the total surface area susceptible to defects while maintaining low power consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases luminous efficiency, improves mechanical strength to prevent structural damage, and enhances manufacturing yield by optimizing current density and reducing surface defects from miniaturization.
Implementation Method 1
the active structure includes a first active structure and a second active structure, wherein the first active structure corresponds to the first portion and the second active structure corresponds to the second portion... When the optoelectronic semiconductor device is operating, the first portion does not emit light
Data Source
AI summary
An optoelectronic semiconductor device is provided. The optoelectronic semiconductor device includes an epitaxial stack, a trench, a concave portion, a first contact structure, and a first electrode. The epitaxial stack includes a first semiconductor structure, an active structure on the first semiconductor structure, and a second semiconductor structure on the active structure, wherein the epitaxial stack has a first portion and a second portion, and the second semiconductor structure of the first portion is separated from the second semiconductor structure of the second portion. The trench is located between the first portion and the second portion. The concave portion is located in the first portion. The first contact structure is located in the concave portion. The first electrode covers the first contact structure. When the optoelectronic semiconductor device is operating, the first portion does not emit light.