Segmented Semiconductor Structure for Higher Light Extraction
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Solution Overview
Problem
Conventional semiconductor devices face challenges in achieving high light extraction efficiency, enhanced optical output, and reduced operating voltage, while also being flexible and resistant to external stress.
Innovation Solution
The semiconductor device incorporates a specific structure with a plurality of semiconductor structures, a first insulating layer, a reflective layer, and a second insulating layer, which includes recesses and protrusions to control light emission and beam angles, and a bonding layer to enhance light extraction and flexibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If Al composition is increased to enhance light emission, then light emission intensity is improved, but light extraction efficiency deteriorates due to increased lateral light emission and absorption in semiconductor structure
Solution Approach 1:
The device is divided into multiple semiconductor structures arranged in an array, with insulating layers separating them. This segmentation allows independent optimization of each structure while collectively improving light extraction through reduced lateral emission interference between adjacent structures.
Solution Approach 2:
Insulating layers are introduced as intermediary materials between semiconductor structures and between the semiconductor structures and the substrate. These intermediary layers prevent harmful lateral light emission and absorption, acting as barriers that improve overall light extraction efficiency while allowing high Al composition in the active layer.
2Ease of manufacture
If conventional semiconductor device structure is used, then manufacturing simplicity is maintained, but light extraction efficiency and optical output remain limited
Solution Approach 1:
The active layer is segmented into multiple discrete semiconductor structures rather than a single continuous layer. This segmentation increases the total surface area for light emission and extraction while maintaining compatibility with conventional semiconductor manufacturing processes like MOCVD or MBE growth.
Solution Approach 2:
The invention transitions from a planar active layer to a three-dimensional array of semiconductor structures. This dimensional change increases the effective light extraction surface area and allows light to be extracted from multiple directions, enhancing optical output without complicating the fundamental manufacturing approach.
3Stability of the object's composition
If rigid substrate is used for semiconductor device, then structural stability is improved, but device flexibility and adaptability to external stress deteriorate
Solution Approach 1:
The semiconductor structures are formed as thin-film structures on the substrate, allowing the device to maintain structural stability while exhibiting flexibility. The thin-film nature of the semiconductor layers enables the device to adapt to external stress and conform to curved surfaces while maintaining operational integrity.
Solution Approach 2:
The array of discrete semiconductor structures provides mechanical compliance that allows the device to flex and adapt to external stress. The segmented structure can deform more easily than a continuous rigid structure, improving flexibility and adaptability while maintaining structural integrity through the insulating layers that hold the structures in place.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves light extraction efficiency, enhances optical output, reduces operating voltage, and allows for flexible device applications while maintaining reliability and durability.
Implementation Method 1
a reflective layer, and a second insulating layer disposed on the reflective layer
Implementation Method 2
a bonding layer disposed on the second insulating layer and on the substrate, and the substrate disposed on the bonding layer
Data Source
Figure 1
Figure 2~3
Figure 4a~4b
AI summary
An embodiment provides a semiconductor element, which comprises: a plurality of semiconductor structures, each of which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a first recess extending through the second conductive semiconductor layer and the active layer to a partial area of the first conductive semiconductor layer; a second recess disposed between the plurality of semiconductor structures; a first electrode disposed at the first recess and electrically connected to the first conductive semiconductor layer; a reflective layer disposed under the second conductive semiconductor layer; and a protrusion part disposed on the second recess and protruding higher than the upper surfaces of the semiconductor structures, wherein a surface, on which the first electrode contacts the first conductive semiconductor layer in the first recess, is 300 to 500 nm distant from the upper surfaces of the semiconductor structures.