Select Gate Touch-Up Pulse Adjustment for Vt Distribution Control

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Solution Overview

Problem

Existing memory sub-systems face inefficiencies in managing select gate (SG) scans and touch up (TU) program pulses, leading to suboptimal Vt distribution and increased error rates due to one-size-fits-all approaches and temperature-related issues, which are not adequately addressed by traditional methods.

Innovation Solution

A selective and intelligent SG touch up component dynamically adjusts TU program pulses based on threshold voltage (Vt) distribution and temperature conditions, ensuring precise placement of Vt within the desired range by analyzing in-field data and temperature information.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a one-size-fits-all approach is used for TU program pulses, then device complexity is reduced, but manufacturing precision and reliability deteriorate due to suboptimal Vt distribution

Engineering Contradiction:
Improvecomplexity of TU program pulse managementVSAvoidVt distribution precision
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The patent segments the uniform TU program pulse approach into individualized pulses for each select gate based on its specific Vt distribution characteristics. The system divides memory blocks into groups and applies customized TU pulses to each group or individual SG, rather than applying a single uniform pulse to all SGs, thereby achieving precise Vt control while managing complexity through systematic grouping.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements local quality by tailoring TU program pulse parameters (amplitude, duration, timing) to the specific needs of each select gate or group based on their individual Vt distributions. This localized adjustment ensures that each SG receives the precise pulse characteristics required to achieve optimal Vt placement, rather than applying a generic pulse that may be suboptimal for specific gates.

Inventive Principle:
Principle #3Local quality

2Ease of operation

If traditional TU program pulse methods are used, then ease of operation is maintained, but reliability deteriorates due to temperature-related issues

Engineering Contradiction:
Improveoperational simplicity of TU program pulse applicationVSAvoiderror rate under temperature variations
Core Design Contradiction:
Ease of operationVSReliability

Solution Approach 1:

The patent implements feedback mechanisms by monitoring Vt distribution characteristics and temperature conditions, then using this information to dynamically adjust TU program pulse parameters. The system measures actual Vt distributions after programming operations and uses this feedback to refine subsequent TU pulse applications, ensuring reliable performance across varying temperature conditions while maintaining operational simplicity through automated control.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent changes operational parameters (TU pulse amplitude, duration, timing) based on detected temperature conditions and Vt distribution states. The system dynamically adjusts these parameters to compensate for temperature-related effects on memory cell characteristics, thereby maintaining high reliability across different operating temperatures without requiring complex manual intervention.

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If individualized TU program pulses are applied to each SG, then manufacturing precision and reliability improve, but device complexity and processing time increase

Engineering Contradiction:
ImproveVt placement accuracyVSAvoidcomplexity of selective TU program pulse management
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent manages complexity by segmenting select gates into logical groups based on their Vt distribution characteristics and spatial proximity. Instead of treating each SG completely independently, the system applies TU pulses to groups of SGs with similar characteristics, reducing the number of individual pulse applications required while still achieving precise Vt control for each gate within the group.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements universality by creating a standardized TU program pulse generation and application framework that can handle both individual and group-based SG adjustments. The system uses a unified control mechanism that can adaptively apply pulses to varying numbers of SGs based on their specific needs, thereby managing complexity through a multi-functional approach that covers both granular and aggregate adjustment scenarios.

Inventive Principle:
Principle #6Universality (Multi-functionality)

4Reliability

If frequent SG scans are performed to monitor Vt distribution, then reliability improves, but productivity decreases due to increased processing time

Engineering Contradiction:
Improveerror detection capabilityVSAvoidmemory operation throughput
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent implements periodic action by performing SG scans and Vt distribution monitoring at strategically determined intervals rather than continuously or after every programming operation. The system uses thresholds and conditions to trigger scans only when necessary (e.g., when Vt drift is detected or after certain numbers of programming cycles), thereby maintaining reliability through adequate monitoring while preserving productivity by avoiding excessive scanning.

Inventive Principle:
Principle #19Periodic action

Data Source

PatentUS20260065996A1Select gate selective touch up adjustment
Publication Date: 2026.03.05 MICRON TECHNOLOGY INC
  • US20260065996A1 patent drawing
  • US20260065996A1 patent drawing
  • US20260065996A1 patent drawing

AI summary

An apparatus that includes a set of memory components of a memory sub-system is disclosed for selectively adjusting a touch up program pulse of an SG. The memory sub-system includes a processing device that detects a condition for performing a select gate (SG) scan for a set of SGs associated with a set of memory components of a memory sub-system. The processing device, in response to detecting the condition for performing the SG scan, accesses data associated with a plurality of memory cells of the set of memory components coupled to an individual SG of the set of SGs. The processing device adjusts a touch up (TU) program pulse based on the accessed data associated with the plurality of memory cells and applies the adjusted TU program pulse to the individual SG to place a threshold voltage (Vt) of the individual SG within a specified operating range.