Selective MLD Carbon Blocking Layers for Dielectric Patterning
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Solution Overview
Problem
Conventional semiconductor processing technologies face challenges in forming selectively deposited sacrificial layers that can provide sufficient protection for subsequent deposition operations, as self-assembled monolayers are limited by thickness, selectivity, thermal instability, and reactivity, especially when exposed to plasma or high temperatures.
Innovation Solution
The method involves forming a layer of carbon-containing material on a substrate within a semiconductor processing chamber, using molecular species with specific head groups to selectively couple with metal-containing materials, allowing for the deposition of a second dielectric material while maintaining blocking functionality, and enabling the formation of thicker films that can be readily removed without damaging other materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If self-assembled monolayers are used as sacrificial layers, then the deposition process can be simplified, but the layer thickness is limited and selectivity deteriorates when exposed to plasma or high temperatures
Solution Approach 1:
The patent changes the deposition parameters by using molecular layer deposition (MLD) with controlled cycling of precursor gases (e.g., trimethylaluminum and water or oxygen) to form carbon-containing layers with specific thicknesses (5-50 nm) that are thermally stable and plasma-resistant, overcoming the thickness and selectivity limitations of self-assembled monolayers
Solution Approach 2:
The patent creates composite sacrificial layers by forming carbon-containing materials through MLD that combine the benefits of thickness control, thermal stability, and plasma selectivity, which cannot be achieved with single-component self-assembled monolayers
2Manufacturing precision
If thicker sacrificial layers are formed to provide sufficient protection, then deposition protection is improved, but removal becomes more difficult without damaging other materials
Solution Approach 1:
The patent creates a disposable sacrificial carbon-containing layer that is optimized for easy removal after serving its protective function. The layer can be selectively removed through oxidation or annealing processes that do not damage underlying materials, enabling it to be discarded after fulfilling its temporary protective role
Solution Approach 2:
The patent controls the chemical composition and structure of the carbon-containing layer through MLD parameters (precursor selection, deposition temperature, cycle number) to optimize both protection during deposition and subsequent removal ease, achieving a balance between thickness and removability
3Device complexity
If conventional self-assembled monolayers are used, then the process is simple, but thermal stability deteriorates when exposed to high temperatures
Solution Approach 1:
The patent raises the deposition temperature parameter to 100°C or higher during MLD, which enhances the thermal stability of the resulting carbon-containing sacrificial layer compared to self-assembled monolayers, while maintaining process feasibility through controlled molecular layer deposition cycles
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of selectively deposited blocking materials that allow for increased thickness and improved selectivity, facilitating subsequent deposition operations while maintaining material properties, overcoming the limitations of conventional technologies like self-assembled monolayers.
Implementation Method 1
one or more cycles of providing a first molecular species that selectively couples with the metal-containing material
Implementation Method 2
providing a second molecular species that selectively couples with the first molecular species
Implementation Method 3
removing the layer of carbon-containing material by oxidizing the carbon-containing material
Implementation Method 4
removing the layer of carbon-containing material by annealing the carbon-containing material
Data Source
AI summary
Exemplary methods of semiconductor processing may include forming a layer of carbon-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The substrate may include an exposed region of a first dielectric material and an exposed region of a metal-containing material. The layer of carbon-containing material may be selectively formed over the exposed region of the metal-containing material. Forming the layer of carbon-containing material may include one or more cycles of providing a first molecular species that selectively couples with the metal-containing material. Forming the layer of carbon-containing material may include providing a second molecular species that selectively couples with the first molecular species. The methods may include selectively depositing a second dielectric material on the exposed region of the first dielectric material.