Self-Activated Bias Generator for Memory Leakage

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Solution Overview

Problem

Conventional negative bias generators in semiconductor memory devices consume extra power due to constant operation, especially at low leakage corners, and fail to effectively turn off memory devices due to Process-Voltage-Temperature variations.

Innovation Solution

A self-activated negative bias generator circuit that detects leakage current and selectively generates a negative bias voltage only when necessary, avoiding extra power consumption and improving access performance by using the bias as a word line or bulk bias for memory cells.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a constant negative bias generator is used to compensate for PVT variations, then the memory device can be effectively turned off, but extra power is consumed especially at low leakage corners

Engineering Contradiction:
Improvememory device turn-off effectivenessVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The bias generator transitions from a static constant bias approach to a dynamic adaptive bias system that continuously monitors leakage current and adjusts the negative bias voltage in real-time, enabling the system to optimize between turn-off effectiveness and power consumption based on actual operating conditions

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The system implements a feedback mechanism where the bias generator monitors the leakage current of memory cells and automatically adjusts the negative bias voltage accordingly, creating a closed-loop control system that responds to actual PVT variations and leakage conditions rather than applying a fixed bias

Inventive Principle:
Principle #23Feedback

2Stability of the object's composition

If a constant negative bias is applied to access devices, then PVT variations are compensated, but the system fails to effectively turn off memory devices under varying conditions

Engineering Contradiction:
ImprovePVT variation compensationVSAvoidmemory device turn-off effectiveness
Core Design Contradiction:
Stability of the object's compositionVSReliability

Solution Approach 1:

The bias generator transitions from a static constant bias approach to a dynamic adaptive bias system that continuously monitors leakage current and adjusts the negative bias voltage in real-time, enabling the system to optimize between turn-off effectiveness and power consumption based on actual operating conditions

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The system changes the bias voltage parameter dynamically based on detected leakage current levels, adjusting the magnitude and polarity of the bias voltage to match actual PVT conditions and leakage characteristics rather than using a fixed parameter value

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS11139017B2Self-activated bias generator
Publication Date: 2021.10.05 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11139017B2 patent drawing
  • US11139017B2 patent drawing
  • US11139017B2 patent drawing

AI summary

An integrated circuit device is provided. The integrated circuit device includes: a functional device including a selection device; and a bias generator circuit coupled to the selection device and configured to detect a leakage current of the functional device and generate a bias voltage based on the detected leakage current. The bias voltage is provided to the selection device to control the selection device.