Self-Aligned Pad Layer for Leakage Current Reduction
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Solution Overview
Problem
The challenge in manufacturing highly scaled semiconductor devices lies in stably forming pad layers on active regions, which affects the electrical characteristics and reliability of the devices.
Innovation Solution
A semiconductor device design featuring self-aligned pad layers on active regions, with a pad protrusion extending along the side surface and electrically connected to bit lines, and a device isolation layer that reduces the need for separate separation layers, simplifying the manufacturing process and improving electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If self-aligned pad layers are formed on active regions with device isolation layer, then electrical characteristics and reliability are improved, but manufacturing process complexity increases
Solution Approach 1:
The pad layer is segmented into a main body portion on the active region and a protrusion portion extending along the side surface. This segmentation allows the pad layer to self-align with the active region boundaries defined by the device isolation layer, improving electrical characteristics without requiring complex alignment processes
Solution Approach 2:
The device isolation layer serves dual functions: isolating adjacent active regions and defining the boundaries for self-aligned pad layer formation. The protrusion of the pad layer against the device isolation layer creates natural alignment markers that simplify the manufacturing process while improving electrical characteristics
2Object-affected harmful factors
If pad layer protrusion extends along side surface of active region, then leakage current is minimized, but manufacturing precision requirements increase
Solution Approach 1:
The pad layer protrusion serves as its own alignment reference by extending along the side surface of the active region and contacting the device isolation layer. This self-aligned configuration automatically defines the pad layer boundaries relative to the active region, minimizing leakage current while reducing the need for high-precision external alignment processes
Solution Approach 2:
The pad layer extends from the two-dimensional plane of the active region surface into the third dimension by forming a protrusion along the side surface. This vertical extension creates a self-aligned configuration that minimizes leakage current paths while the protrusion itself serves as the alignment feature, reducing manufacturing precision requirements
Data Source
AI summary
A semiconductor device includes an active region between portions of a device isolation layer on a substrate, a self-aligned pad layer on a first region of the active region, a bit line that is electrically connected to a second region of the active region, and a contact structure on a side surface of the bit line and electrically connected to the self-aligned pad layer. The self-aligned pad layer includes a pad protrusion that extends along an upper portion of a side surface of the first region of the active region, and a side of the self-aligned pad layer is in contact with the device isolation layer.