Self-scanning Light-emitting Thyristor Array for High-resolution Printing
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Solution Overview
Problem
The existing surface light-emitting element arrays for high-resolution printers require numerous bonding pads and wires, leading to increased chip size and manufacturing costs, limiting cost-effectiveness and layout efficiency.
Innovation Solution
A self-scanning light-emitting element array with a pnpn-type light-emitting thyristor configuration, where a semiconductor substrate includes island structures with current confining layers and oxidized regions, allowing for efficient current confinement and reduced need for bonding pads, utilizing a p-type GaAs substrate with AlGaAs and AlAs compound semiconductors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a surface light-emitting element array uses multiple light-emitting elements arranged in linear form, then high-resolution light emission is achieved, but the chip size increases due to numerous bonding pads and wires
Solution Approach 1:
The patent combines the light-emitting thyristor and shift thyristor into a single integrated island structure on one substrate. This merging eliminates the need for separate bonding pads and wires for each element, reducing chip size while maintaining high-resolution light emission capabilities through the self-scanning mechanism
Solution Approach 2:
The integrated island structure serves multiple functions: it contains both the light-emitting thyristor for light generation and the shift thyristor for self-scanning control. This multi-functionality reduces the number of discrete components and bonding connections needed, thereby reducing chip size while preserving resolution
2Adaptability or versatility
If a surface light-emitting element array integrates multiple light-emitting elements on one substrate, then light emission functionality is improved, but manufacturing cost increases due to increased device complexity
Solution Approach 1:
By merging the light-emitting thyristor and shift thyristor into a single integrated structure, the patent reduces the number of discrete components that need to be manufactured and assembled. This integration simplifies the manufacturing process and reduces costs while maintaining enhanced light emission functionality
Solution Approach 2:
The shift thyristor enables self-scanning functionality, allowing the device to control its own operation without requiring external control circuits. This self-service capability reduces device complexity and manufacturing cost while preserving full light emission functionality
3Use of energy by moving object
If a light-emitting thyristor uses a pnpn structure with compound semiconductor layers, then light emission efficiency is improved, but the device complexity increases
Solution Approach 1:
The patent merges the light-emitting thyristor with the shift thyristor in a single integrated structure, reducing overall device complexity. The pnpn structure with compound semiconductor layers is retained within the integrated island to maintain light emission efficiency
Solution Approach 2:
The current confining layer is selectively positioned within the island structure to confine current flow to specific regions. This local quality enhancement improves light emission efficiency by directing current through the active regions of the pnpn structure without increasing overall device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient light emission with reduced chip size and cost, as the self-scanning mechanism eliminates the need for individual bonding pads for each light-emitting thyristor, allowing for higher resolution without increasing chip size or manufacturing costs.
Implementation Method 1
an oxidized region that is selectively oxidized from a side surface of the island structure and a side surface of the groove portion is formed in the current confining layer
Implementation Method 2
an electric current flows between an anode and a cathode when a driving current is applied to a gate, whereby the light-emitting thyristor emits light
Data Source
AI summary
Disclosed is a light-emitting element including a semiconductor substrate, an island structure formed on the semiconductor substrate and including at least a current confining layer and p-type and n-type semiconductor layers, a light-emitting thyristor formed in the island structure and having a pnpn structure, and a shift thyristor formed in the island structure and having a pnpn structure, wherein a groove portion having a depth such that the groove portion reaches at least the current confining layer is formed between a formation region of the shift thyristor of the island structure and a formation region of the light-emitting thyristor, and an oxidized region that is selectively oxidized from a side surface of the island structure and a side surface of the groove portion is formed in the current confining layer.