Self-Selecting Memory Cells With Unipolar Pulses for Concurrent Programming
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Solution Overview
Problem
Existing memory cell programming methods require bipolar current pulses, limiting concurrent programming of memory cells to different data states within a tile and increasing energy and time consumption.
Innovation Solution
Unipolar programming of self-selecting memory cells using a single polarity current pulse, allowing concurrent programming of multiple memory cells to different data states.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If bipolar current pulses are used for programming memory cells, then memory cells can be programmed to different data states, but concurrent programming of multiple memory cells within a tile is limited and energy consumption increases
Solution Approach 1:
The patent changes the polarity parameter of the programming pulses from bipolar (positive and negative) to unipolar (single polarity). This parameter change allows multiple memory cells to be programmed concurrently using the same polarity pulse, thereby improving productivity while reducing energy consumption since only one pulse polarity needs to be applied across the entire tile at a time
2Productivity
If bipolar current pulses are used for programming memory cells, then different data states can be programmed, but programming time increases
Solution Approach 1:
By changing the pulse polarity parameter from bipolar to unipolar, the patent enables simultaneous application of programming pulses to multiple memory cells within a tile. This eliminates the sequential timing requirements of bipolar programming, thereby reducing programming time and improving programming speed
3Productivity
If unipolar programming is implemented, then concurrent programming of multiple memory cells is enabled, but device complexity increases
Solution Approach 1:
The unipolar programming approach makes the programming circuit universal by using a single pulse polarity for all memory cells in a tile, regardless of their individual data state requirements. This multi-functionality reduces circuit complexity compared to bipolar programming, which would require separate pulse generation and timing control for different cell states
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces programming time and energy consumption by enabling simultaneous switching of memory cells to different data states within a single tile.
Implementation Method 1
resistance variable memory cells can store data based on the resistance state of a storage element
Data Source
AI summary
Systems, methods, and apparatuses are provided for unipolar programming of memory cells in a semiconductor device. A memory has a plurality of self-selecting memory cells and circuitry configured to program a self-selecting memory cell of the plurality of self-selecting memory cells to a first data state or a second data state by applying a current pulse to the self-selecting memory cell. The current is a set pulse or a reset pulse. The set pulse and the reset pulse have a same polarity.