Semiconductive Layer Insulation via Substrate Pre-Deformation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for manufacturing electronic devices and circuits with semiconductive materials require additional processing steps, leading to increased manufacturing time, complexity, and cost, and are often incompatible with certain materials, limiting high-volume production and flexibility.
Innovation Solution
A method involving a layer of semiconductive material supported by a compressible layer, where insulative features are formed by displacing selected portions of the semiconductive material towards the compressible material to create permanent deformations, thereby separating them and forming insulative barriers without the need for extensive etching or additional processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If traditional embossing techniques are used to form insulative features, then the initial patterning of the upper layer is facilitated, but additional processing steps are required and the upper layer of semiconductive material is distorted
Solution Approach 1:
The substrate is pre-deformed with a pattern of protrusions before the semiconductive layer is deposited. This preliminary action ensures that when the semiconductive layer is formed over the deformed substrate, the insulative features are automatically created without requiring subsequent distortion or additional processing steps to complete the insulation.
Solution Approach 2:
Instead of deforming the upper semiconductive layer after deposition (traditional approach), the invention inverts the sequence by deforming the substrate first, then depositing the semiconductive layer. This reversal eliminates the distortion problem because the semiconductive layer is deposited on an already-formed pattern rather than being forced into a pattern afterward.
2Ease of manufacture
If etching technique is used to expose the underlying substrate, then insulative features are formed, but semiconductive material is removed from other portions of the semiconductive layer
Solution Approach 1:
The substrate deformation with protrusions is performed before semiconductive layer deposition. This preliminary structuring creates physical barriers that prevent the need for etching, thereby avoiding removal of semiconductive material from areas where it should be preserved.
Solution Approach 2:
The deformed substrate acts as an intermediary structure that physically defines the insulative features before the semiconductive layer is deposited. This intermediary approach eliminates the need for chemical etching processes that would otherwise remove semiconductive material.
3Reliability
If additional processing steps are performed to complete insulative features, then fully insulating features are achieved, but manufacturing time and complexity increase
Solution Approach 1:
The substrate is pre-deformed with protrusions before semiconductive layer deposition, creating the insulative feature geometry in advance. This preliminary action ensures complete insulation is achieved automatically when the semiconductive layer is deposited, eliminating the need for subsequent processing steps and enabling high-speed manufacturing.
Solution Approach 2:
The formation of insulative features is merged with the substrate preparation step itself. By deforming the substrate before deposition, the insulative feature creation is combined with the base structure formation, eliminating separate processing steps and accelerating manufacturing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the number of processing steps, enhances manufacturing efficiency, and allows for faster, high-volume production of electronic devices and circuits on flexible substrates, while being compatible with a variety of materials.
Implementation Method 1
displacing a respective selected portion of the layer of semiconductive material towards the compressible material so as to compress compressible material under the or each displaced portion and separate at least partly the or each displaced portion from undisplaced semiconductive material
Data Source
Figure 1a~1c
Figure 2a~2e
Figure 3a~6
AI summary
A method of manufacturing an electronic device, comprising a layer of semiconductive material and at least one insulative feature arranged to interrupt the layer of semiconductive material, comprises: providing a layer of semiconductive material, and a layer of compressible material supporting the layer of semiconductive material; and forming the or each insulative feature by a method comprising displacing a respective selected portion of the layer of semiconductive material towards the compressible material so as to compress compressible material under the or each displaced portion and separate at least partly the or each displaced portion from undisplaced semiconductive material.