Semiconductor Structure Aperture Ratio and Wire Breakage
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Solution Overview
Problem
Conventional semiconductor structures for liquid crystal displays (LCDs) face challenges in achieving a high aperture ratio while maintaining satisfactory electrical characteristics, as the formation of contact holes to interconnect metal layers reduces the aperture ratio and increases the risk of wire breakage.
Innovation Solution
The semiconductor structure employs a patterned first metal layer as both a gate electrode and data line, and a patterned second metal layer as a gate line and common electrode, allowing electrical connection without the need for contact holes between them, thereby reducing the number of contact holes and improving the aperture ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If contact holes are formed to interconnect metal layers, then electrical connection between metal layers is achieved, but aperture ratio is reduced and wire breakage risk increases
Solution Approach 1:
The patent merges the gate electrode and data line into a single patterned first metal layer, eliminating the need for contact holes between these two conductive elements. This integration directly reduces the number of contact holes, thereby increasing the aperture ratio while maintaining reliable electrical connections through continuous metal pathways.
Solution Approach 2:
The first metal layer serves multiple functions simultaneously: it forms both the gate electrode and the data line. This multi-functionality eliminates the need for separate conductive paths and contact holes between these elements, thus improving aperture ratio while ensuring electrical connection reliability through the unified metal structure.
2Reliability
If contact holes are formed to interconnect metal layers, then electrical connection is achieved, but the risk of wire breakage increases
Solution Approach 1:
By combining the gate electrode and data line into a single continuous first metal layer, the patent eliminates contact holes that would otherwise create potential weak points for wire breakage. The continuous metal structure provides enhanced mechanical strength and reliability, reducing the risk of connection failures.
3Reliability
If more contact holes are formed, then electrical interconnection is improved, but manufacturing complexity increases
Solution Approach 1:
The integration of gate electrode and data line into one metal layer reduces the total number of contact holes required, simplifying the manufacturing process. Fewer contact holes mean fewer lithography and etching steps, reduced alignment requirements, and lower overall manufacturing complexity while maintaining electrical interconnection quality.
Data Source
AI summary
A semiconductor structure and a method for manufacturing the same are provided. Compared to conventional structures of thin film transistors, the structure of the present invention uses a patterned first metal layer as a data line, and a patterned second metal layer as a gate line. In a thin film transistor, a gate is also located in the patterned first metal layer, and is electrically connected to the gate line located in the patterned second metal layer through a contact hole. A source and a drain of the thin film transistor are electrically connected to the data line through a contact hole. The structure of the present invention increases a storage capacitance and an aperture ratio.