Semiconductor Back-Gate Control via Merged Conductive Layers
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Solution Overview
Problem
Conventional methods for connecting ground planes of NMOSFET and PMOSFET to voltage sources in semiconductor devices require extra contacts and interconnections, increasing the area occupied by the device and complicating the manufacturing process.
Innovation Solution
A semiconductor structure and manufacturing method that eliminates the need for separate back-gate contacts by using capacitive coupling through conductive layers connected via conductive contacts, allowing for the control of back-gate voltages of transistors without additional contacts, thereby reducing the area occupied by the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate back-gate contacts are provided for each transistor, then the back-gate voltage control is achieved, but the area occupied by the device increases
Solution Approach 1:
The patent merges the back-gate control function into the existing interconnection structure by using the second conductive material layer (initially intended for other purposes) to also serve as the back-gate electrode. This eliminates the need for separate back-gate contacts while maintaining voltage control capability. The conductive contact connects this shared conductive layer to the voltage source, achieving both area reduction and functional integration.
Solution Approach 2:
The second conductive material layer is designed to perform multiple functions: it serves as both an interconnection element in the standard circuit architecture and as the back-gate electrode for transistor control. This multi-functionality approach allows the same structural element to fulfill dual roles, thereby eliminating redundant components and reducing overall device area.
2Reliability
If extra contacts and interconnections are added for ground plane connection, then the voltage source connection is achieved, but the manufacturing process becomes more complex
Solution Approach 1:
The patent combines the back-gate connection function with the existing interconnection layers. The second conductive material layer, which is already part of the standard multi-layer interconnection structure, is utilized to also provide the back-gate connection. This merging eliminates the need for additional dedicated contacts and interconnection layers, thereby simplifying the manufacturing process while ensuring reliable voltage source connection.
Solution Approach 2:
The existing interconnection structure is designed to serve dual purposes: standard signal/power transmission and back-gate voltage control. By making the second conductive material layer universal in function, the patent eliminates the need for separate manufacturing steps dedicated solely to back-gate connection, thereby reducing process complexity.
3Reliability
If extra contacts and interconnections are added for ground plane connection, then the voltage source connection is achieved, but the area occupied by the device increases
Solution Approach 1:
The patent merges the back-gate control function into the existing interconnection structure by using the second conductive material layer (initially intended for other purposes) to also serve as the back-gate electrode. This eliminates the need for separate back-gate contacts while maintaining voltage control capability. The conductive contact connects this shared conductive layer to the voltage source, achieving both area reduction and functional integration.
Solution Approach 2:
The second conductive material layer is designed to perform multiple functions: it serves as both an interconnection element in the standard circuit architecture and as the back-gate electrode for transistor control. This multi-functionality approach allows the same structural element to fulfill dual roles, thereby eliminating redundant components and reducing overall device area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the area required for transistor connections, increases the utilization ratio of the wafer, and simplifies the manufacturing process by eliminating the need for separate back-gate contacts for each transistor.
Implementation Method 1
A conductive contact is formed which runs through the dielectric layer and extends down into the first conductive material layer... The first conductive material layer is electrically connected to outside by the conductive contact to realize control of the back-gate voltages of the first group of transistors
Data Source
AI summary
The present invention relates to a semiconductor structure and a method for manufacturing the same. A semiconductor structure comprises: a semiconductor substrate; a first insulating material layer, a first conductive material layer, a second insulating material layer, a second conductive material layer and an insulating buried layer formed in sequence on the semiconductor substrate; a semiconductor layer bonded on the insulating buried layer; transistors formed on the semiconductor layer, the channel regions of the transistors each being formed in the semiconductor layer and each having a back-gate formed from the second conductive material layer; a dielectric layer covering the semiconductor layer and the transistors; isolation structures for at least electrically isolating each transistor from its adjacent transistors, the top of the isolation structures being flush with or slightly higher than the upper surface of the semiconductor layer, and the bottom of the isolation structures being in the second insulating material layer; and a conductive contact running through the dielectric layer and extending down into the first conductive material layer.