Semiconductor Barrier Pattern for Isolation Margin
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Solution Overview
Problem
The existing semiconductor memory devices face challenges in reducing the overall area due to the horizontal channel region of transistors, leading to increased leakage current and contact resistance issues in buried gate structures, particularly with the isolation gate structure causing short-circuiting and increased contact resistance.
Innovation Solution
A semiconductor device with a barrier pattern extending from the device isolation region to the region between the active region and the storage node contact, and a method involving the formation of stepped device isolation regions and barrier patterns to increase the process margin and prevent short-circuiting, while also enhancing the contact area for reduced resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a trench-type device isolation film is used in buried gate structure, then device isolation is improved, but leakage current increases and contact resistance increases
Solution Approach 1:
A barrier pattern is introduced as an intermediary element between the device isolation film and the active region. This barrier pattern prevents direct contact between the isolation film and active region, thereby blocking leakage current paths while maintaining effective device isolation. The barrier pattern acts as a mediator that resolves the contradiction between isolation effectiveness and leakage prevention.
Solution Approach 2:
The barrier pattern is formed as a sacrificial or temporary structure during manufacturing that can be easily added and removed or integrated. It provides the necessary isolation function during operation without requiring complex or expensive modifications to the base isolation structure.
2Productivity
If contact hole size is reduced to increase integration density, then productivity is improved, but pattern definition fails and short-circuiting occurs
Solution Approach 1:
The barrier pattern extends in the vertical dimension from the device isolation film upward toward the active region. This vertical extension creates additional spatial separation that prevents short-circuiting even when horizontal contact hole dimensions are reduced for higher integration density. The solution moves from 2D planar separation to 3D volumetric separation.
3Adaptability or versatility
If isolation gate structure is used to define bit line contact and storage node contact, then device layout flexibility is improved, but leakage current and contact resistance increase
Solution Approach 1:
The barrier pattern is selectively positioned only where needed - specifically between the device isolation film and regions requiring low-resistance contacts. This localized application maintains the adaptability benefits of the isolation gate structure for layout flexibility while locally preventing harmful effects of high contact resistance and leakage current in critical contact regions.
Data Source
AI summary
A semiconductor device and a method for manufacturing the same are disclosed, which can improve device characteristics by increasing a process margin between an active region and a storage node contact. The semiconductor device includes an active region, a device isolation film formed to have a lower height than the active region, and exposing an upper part of the active region, and a barrier pattern formed at a sidewall of the exposed active region of an upper part of the device isolation film.