Semiconductor Package Barriers for Underfill Keep-In Zones
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in containing underfill and adhesive materials within narrow boundaries due to the need for larger keep-out-zones (KOZs), which occupy valuable space and hinder functionality enhancement.
Innovation Solution
The implementation of barriers formed by walls using small molecules, oligomers, polymers, or inorganic materials, applied through jetting or extrusion techniques, to create a keep-in-zone (KIZ) that confines these materials within a smaller area, allowing for increased functionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional KOZ methods are used to prevent material leakage, then material containment is achieved, but valuable substrate space is occupied and functionality is hindered
Solution Approach 1:
The barrier structure is segmented into multiple functional layers including a base layer, a barrier layer with vertical walls, and an overfill layer. This segmentation allows each layer to perform its specific function efficiently, containing materials within a smaller footprint while maintaining reliability.
Solution Approach 2:
The invention transitions from planar KOZ containment to three-dimensional barrier structures with vertical walls. By adding the vertical dimension, materials are confined within a smaller horizontal area while the barrier extends vertically to prevent leakage, thus resolving the space occupation issue.
2Reliability
If barrier structures are implemented to contain materials, then material leakage is prevented, but manufacturing complexity increases
Solution Approach 1:
The barrier layer's properties are adjusted by controlling the deposition process parameters such as thickness, material composition, and deposition rate. These parameter changes enable the barrier to achieve effective containment while maintaining manufacturability through standard deposition techniques.
Solution Approach 2:
The barrier structure uses composite material layers including the base layer, barrier layer, and overfill layer, each with specific material properties. This composite approach allows optimization of each layer for its specific function while maintaining overall structural integrity and manufacturability.
Data Source
AI summary
Novel tools and techniques are provided for implementing a semiconductor package or a chip package, and more particularly methods, systems, and apparatuses are provided for implementing a semiconductor package or a chip package including one or more barriers to form a keep-out-zone or a keep-in-zone. In various embodiments, system include a substrate including a first layer, a wall coupled to a first surface of the first layer, and a material coupled to the first surface of the first layer. The wall can be configured to block the material from flowing or expanding outside of the wall.


