Semiconductor Base Region Doping for Saturation Current and Latch-up
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Solution Overview
Problem
Conventional semiconductor apparatuses, such as IGBTs, face challenges in improving saturation current characteristics due to limitations in doping concentration and structural design, leading to increased base resistance and latch-up issues.
Innovation Solution
The semiconductor apparatus incorporates a semiconductor substrate with specific doping regions, including a high concentration base region and accumulation regions, along with gate trench and dummy trench portions, to enhance doping concentration gradients and reduce base resistance, thereby improving saturation current characteristics and suppressing latch-ups.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If uniform doping concentration is used in the base region, then manufacturing process is simplified, but saturation current characteristics and latch-up suppression cannot be simultaneously optimized
Solution Approach 1:
The patent employs preliminary action by performing selective doping operations in a predetermined sequence: first forming the low concentration base region across the base, then adding the high concentration base region in specific areas adjacent to the emitter. This staged doping approach allows precise control over the final doping concentration distribution, achieving both saturation current improvement and latch-up suppression while maintaining manufacturing feasibility through systematic process steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively lowers base resistance and enhances saturation current characteristics while suppressing latch-ups, improving the overall performance of the semiconductor apparatus.
Implementation Method 1
a high concentration base region that: is provided in contact with the low concentration base region; is provided apart from the gate trench portion; and has a doping concentration higher than that of the low concentration base region
Data Source
AI summary
To provide a semiconductor apparatus including: a semiconductor substrate having a drift region; an emitter region provided inside the semiconductor substrate and above the drift region; a base region provided between the emitter and drift regions; an accumulation region provided between the base and drift regions; and a plurality of gate trench portions provided to penetrate the accumulation region from an upper surface of the semiconductor substrate. The base region has: a low concentration base region provided in contact with the gate trench portions; and a high concentration base region provided apart from the gate trench portions and having a doping concentration higher than the low concentration base region. The high concentration base region is provided below the emitter region, and a width of the high concentration base region in a depth direction of the semiconductor substrate is larger than 0.1 μm.