Semiconductor Bevel Etching for Stable Edge Pattern Transfer

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

The manufacturing and integration of semiconductor devices face challenges such as pattern peeling and collapse over the bevel portion of the semiconductor substrate, leading to particle formation and reduced yield due to reattachment during manufacturing processes.

Innovation Solution

A method involving the formation of a target layer and an energy-sensitive layer, followed by an energy treating process to create a treated portion in the peripheral region, which is then removed, transferring the remaining pattern of the energy-sensitive layer to the target layer, thereby exposing the bevel portion and reducing material overhang.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If conventional manufacturing operations are implemented for integration of semiconductor devices, then device functionality and integration are improved, but pattern peeling and collapse occur over the bevel portion

Engineering Contradiction:

Improvedevice functionalityVSAvoidpattern integrity

Core Design Contradiction:

Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The patent segments the semiconductor substrate into a central region and a peripheral region with a bevel portion. By selectively removing material only in the peripheral region to create an exposed bevel surface, the patent prevents pattern peeling and collapse at the bevel portion while maintaining pattern integrity in the central region. This spatial segmentation allows different regions to have different structural characteristics suitable for their specific functions.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent applies local quality by creating a distinct structural configuration only in the peripheral region where the bevel portion is exposed, while the central region maintains the conventional layered structure. This localized modification addresses the specific problem of pattern collapse at the bevel portion without affecting the overall device functionality in the central region.

Inventive Principle:

Principle #3Local quality

2Productivity

If manufacturing operations are increased for greater integration, then device complexity and functionality are improved, but particle formation increases due to pattern collapse

Engineering Contradiction:

Improveintegration levelVSAvoidparticle formation

Core Design Contradiction:

ProductivityVSObject-generated harmful factors

Solution Approach 1:

The patent performs preliminary action by exposing the bevel portion before subsequent manufacturing operations are conducted. By removing material in the peripheral region in advance, the bevel portion is exposed and stabilized, preventing pattern peeling and collapse that would otherwise generate particles during later processing steps. This preliminary structural preparation eliminates the source of particle contamination.

Inventive Principle:

Principle #10Preliminary action

3Ease of manufacture

If conventional patterning is used over bevel portions, then manufacturing simplicity is maintained, but pattern collapse and peeling occur

Engineering Contradiction:

Improvepatterning processVSAvoidpattern stability

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The patent applies the taking out principle by removing material in the peripheral region to extract and expose the bevel portion. This creates a structural configuration where the bevel surface is exposed and stabilized, preventing pattern collapse during conventional patterning operations. The removal of excess material eliminates the root cause of pattern instability while maintaining compatibility with standard manufacturing processes.

Inventive Principle:

Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively reduces pattern peeling and collapse, eliminating particle reattachment and reducing defects, thereby improving the performance and yield of semiconductor devices.

Implementation Method 1

performing an energy treating process to form a treated portion in the energy-sensitive layer

Methodology Applied

Scientific EffectEnergy treating process: Photopolymerisation

Data Source

PatentUS12353129B2Method for preparing semiconductor device structure including bevel etching process

Publication Date: 2025.07.08 NAN YA TECH

AI summary

A method for preparing a semiconductor device structure is provided. The method includes forming a target layer over a semiconductor substrate, and forming an energy-sensitive layer over the target layer. The method also includes performing an energy treating process on the energy-sensitive layer to transform a portion of the energy-sensitive layer into a treated portion. An untreated portion of the energy-sensitive layer is surrounded by the treated portion. The method further includes removing the treated portion, and transferring a pattern of the untreated portion of the energy-sensitive layer to the target layer such that the semiconductor substrate is exposed.