Semiconductor Device With Blocking Insulation Film
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The rapid downscaling of semiconductor devices poses challenges in effectively integrating transistors and non-active components on substrates, particularly in preventing damage to epitaxial regions during etching processes and ensuring reliable connections without compromising the integrity of gate structures.
Innovation Solution
The semiconductor device design incorporates a fin structure with alternately stacked semiconductor patterns, a blocking insulation film, and epitaxial regions, which protects the epitaxial layers from over-etching damage and allows for stable connections through contact plugs, while maintaining the integrity of gate structures by using materials with different etch selectivity and forming blocking insulation films to prevent damage during gate electrode formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If etching processes are used to form gate structures, then transistor performance is improved, but epitaxial regions may be damaged by over-etching
Solution Approach 1:
A blocking insulation film is introduced as an intermediary layer between the etching process and the epitaxial region. This film selectively blocks the etchant from reaching the epitaxial region while allowing the gate structure to be properly formed, thus protecting the epitaxial region from over-etching damage while maintaining transistor performance
Solution Approach 2:
The blocking insulation film is selectively formed only in regions where epitaxial structures are present and need protection. This localized approach allows the etching process to proceed normally in transistor regions while providing targeted protection to epitaxial regions, resolving the contradiction between achieving good transistor performance and preventing epitaxial damage
2Adaptability or versatility
If contact plugs are formed to connect source/drain regions and epitaxial regions, then device functionality is improved, but risk of damaging epitaxial regions increases
Solution Approach 1:
The blocking insulation film is formed in advance, before contact plug formation begins. This preliminary protective layer is already in place when contact plugs are being formed, preventing etching damage to epitaxial regions while allowing contact plugs to be successfully formed for device functionality
Solution Approach 2:
The blocking insulation film serves as a protective intermediary during contact plug formation, allowing the contact plug material to be deposited and patterned without the etching processes damaging the underlying epitaxial regions, thus enabling device functionality while preventing damage
3Reliability
If gate electrode formation processes are used, then transistor control is improved, but integrity of epitaxial regions may be compromised
Solution Approach 1:
The blocking insulation film acts as a protective intermediary during gate electrode formation. It allows the gate electrode to be properly formed for improved transistor control while simultaneously protecting the epitaxial region integrity by blocking harmful etching processes
Solution Approach 2:
The blocking insulation film is selectively positioned to provide protection only where epitaxial regions need to be preserved during gate formation. This localized protection maintains epitaxial region integrity while allowing gate electrode formation to proceed for improved transistor control in other areas
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enables the stable operation of semiconductor devices with high accuracy and speed, preventing damage to epitaxial regions and ensuring reliable connections, thus optimizing transistor structure and preventing over-etching issues, enhancing the semiconductor device's performance and reliability.
Implementation Method 1
using materials with different etch selectivity and forming blocking insulation films to prevent damage during gate electrode formation
Implementation Method 2
an epitaxial region adjacent to the fin structure
Data Source
AI summary
A semiconductor device including a transistor disposed on a first region of a substrate, the transistor including source/drain regions, a plurality of channel layers spaced apart from each other in a direction perpendicular to an upper surface of the substrate while connecting the source/drain regions, respectively, a gate electrode surrounding each of the plurality of channel layers, and a gate insulator between the gate electrode and the plurality of channel layers; and a non-active component disposed on a second region of the substrate, the non-active component including a fin structure including an a plurality of first semiconductor patterns alternately stacked with a plurality of second semiconductor patterns, an epitaxial region adjacent to the fin structure, a non-active electrode intersecting the fin structure, and a blocking insulation film between the non-active electrode and the fin structure.