Semiconductor Boundary Guide Structure for Crack Prevention
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face issues during the dicing process, where chipping, delamination, or micro-cracking can occur, and moisture permeation can damage the integrated circuits, leading to reliability and performance problems.
Innovation Solution
A semiconductor device with a guide structure, including conductive patterns of varying thicknesses, is implemented along the boundary region to prevent cracks and moisture penetration, enhancing the protection of the active circuit region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If dicing process is performed to separate semiconductor chips, then productivity is improved, but chipping, delamination, or micro-cracking occurs reducing reliability
Solution Approach 1:
The guide structure is formed in advance along the boundary region before the dicing process. This pre-formed structure serves as a stress relief path that prevents cracks from propagating into the active circuit region during subsequent dicing operations, thereby maintaining chip integrity while enabling efficient separation
Solution Approach 2:
The boundary region is segmented into a dedicated guide structure that is distinct from the active circuit region. This segmentation allows the boundary region to independently handle stress and cracking during dicing, protecting the active circuits while enabling chip separation
2Device complexity
If boundary region is left unprotected, then device complexity is reduced, but moisture permeation damages integrated circuits reducing reliability
Solution Approach 1:
The guide structure is localized specifically to the boundary region, providing enhanced protection only where moisture permeation is most likely to occur. The active circuit region maintains its original simple structure without unnecessary additions, thus balancing protection needs with structural simplicity
3Manufacturing precision
If uniform thickness conductive pattern is used, then manufacturing precision is maintained, but resistance of wiring increases reducing performance
Solution Approach 1:
The conductive pattern transitions from uniform thickness to variable thickness, with thicker sections strategically placed in regions requiring lower resistance. This local variation in thickness optimizes electrical performance while remaining compatible with standard manufacturing processes that can accommodate thickness variations
4Reliability
If guide structure is formed along boundary region, then reliability is improved, but device complexity increases
Solution Approach 1:
The guide structure is formed as a preliminary feature during the manufacturing process, integrated into the boundary region before final chip separation. This approach incorporates protection into the manufacturing flow itself rather than adding a separate complex assembly step, thus minimizing the increase in device complexity
Data Source
AI summary
A semiconductor device, comprising: a substrate which includes an active circuit region, and a boundary region surrounding the active circuit region, the boundary region including an edge portion of the substrate; a first lower conductive pattern disposed on the substrate of the boundary region; and a first upper conductive pattern connected to the first lower conductive pattern over the first lower conductive pattern, wherein the first upper conductive pattern includes a first portion having a first thickness, a second portion having a second thickness greater than the first thickness, and a third portion having a third thickness greater than the second thickness, and the third portion of the first upper conductive pattern is connected to the first lower conductive pattern, is provided.