Semiconductor Boundary Structure for Mixed-Voltage Isolation
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Solution Overview
Problem
In semiconductor manufacturing, the transition between middle/high voltage and low voltage device regions with different precision nano-processes leads to structural issues and increased costs due to mismatched device sizes and precision, resulting in yield decline and mutual interference between regions.
Innovation Solution
A semiconductor structure featuring a protruding part or sharp corner defined by a deep trench and a shallow trench at the boundary between middle/high voltage and low voltage device regions, acting as a buffer to prevent mutual influence, with the top surface of the protruding part aligned with the surrounding region's flat top surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If different precision nano-processes are used for middle/high voltage and low voltage device regions, then device precision and adaptability are improved, but structural problems occur at region boundaries and manufacturing complexity increases
Solution Approach 1:
The boundary region is segmented into multiple sub-regions (first boundary sub-region with deep trench, second boundary sub-region with shallow trench) to separately address the isolation needs of different voltage regions. This segmentation allows each sub-region to be optimized independently for its specific function, resolving the structural complexity at the boundary while maintaining high precision in both device regions.
2Productivity
If device size does not match nano-process precision, then cost increases and yield declines, but using different nano-processes for different regions creates boundary structural problems
Solution Approach 1:
Different boundary structures (deep trench vs. shallow trench) are applied to different local regions based on their specific isolation requirements. The first boundary sub-region uses a deep trench structure optimized for isolating middle/high voltage devices, while the second boundary sub-region uses a shallow trench structure suitable for low voltage devices. This local optimization allows each region to achieve its required precision and yield without forcing a uniform complex structure across the entire boundary.
3Adaptability or versatility
If middle/high voltage and low voltage device regions are placed on the same chip, then chip functionality and adaptability are improved, but mutual interference occurs between regions
Solution Approach 1:
The boundary structure acts as an intermediary between the middle/high voltage device region and the low voltage device region. The deep trench and shallow trench structures serve as isolation barriers that mediate the interaction between the two voltage regions, preventing direct electrical interference while allowing both regions to coexist on the same chip. This intermediary structure enables the chip to maintain high adaptability and functionality without suffering from mutual interference.
Data Source
AI summary
The invention provides a semiconductor structure, which comprises a middle/high voltage device region and a low voltage device region, a plurality of fin structures disposed in the low voltage device region, and a protruding part located at a boundary Between the middle/high voltage device region and the low voltage device region. A top surface of the protruding part is flat, and the top surface of the protruding part is aligned with a flat top surface of the middle/high voltage device region.