Semiconductor Capacitor Adhesive Layer for DRAM Reliability

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Solution Overview

Problem

The challenge in semiconductor device manufacturing is the poor adhesiveness between silicon nitride films and bottom electrodes, leading to peeling and deformation during heat treatment, which results in increased leakage current and reduced reliability of DRAM capacitors.

Innovation Solution

A semiconductor device structure incorporating a first insulating layer, a capacitor with bottom and top electrodes, and an adhesive layer, where an intermediate layer is interposed between the adhesive layer and the insulating film to enhance adhesiveness, preventing peeling and deformation during the capacitor formation process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a silicon nitride film is used as an etching stopper adjacent to the bottom electrode, then the etching process can be controlled, but the adhesiveness between the silicon nitride film and the bottom electrode is poor, causing peeling during heat treatment

Engineering Contradiction:
Improveetching controlVSAvoidadhesiveness
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

An adhesive layer is introduced as an intermediary between the silicon nitride film (etching stopper) and the bottom electrode. This adhesive layer serves as a mediator that provides strong bonding to both the silicon nitride film and the bottom electrode, resolving the adhesion problem while maintaining the etching control function of the silicon nitride film.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent employs a composite structure consisting of multiple layers: silicon nitride film, adhesive layer, and bottom electrode. Each layer is made of different materials with specific properties optimized for its function, creating a composite structure that achieves both etching control and strong adhesion.

Inventive Principle:
Principle #40Composite materials

2Ease of manufacture

If heat treatment is applied during capacitor formation, then the capacitor structure is formed, but peeling occurs between the silicon nitride film and the bottom electrode, deforming the bottom electrode

Engineering Contradiction:
Improvecapacitor formationVSAvoidstructural integrity
Core Design Contradiction:
Ease of manufactureVSStability of the object's composition

Solution Approach 1:

The adhesive layer is prepared in advance before heat treatment, creating a protective cushioning layer between the silicon nitride film and the bottom electrode. This pre-established adhesive layer prevents peeling and deformation during the subsequent heat treatment process, maintaining structural integrity.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Reliability

If the bottom electrode is peeled or removed from the insulating film, then manufacturing defects occur, but ensuring adhesiveness requires additional adhesive layers that increase process complexity

Engineering Contradiction:
ImproveadhesivenessVSAvoidprocess complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

A single adhesive layer is introduced as an intermediary between the silicon nitride film and the bottom electrode. This intermediary layer simplifies the overall structure by providing adhesion in one location, preventing the need for more complex multi-layer adhesive systems or post-manufacturing repairs.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The enhanced adhesiveness between the bottom electrode and the insulating film improves the reliability and reduces leakage current, ensuring the integrity and performance of the semiconductor device.

Implementation Method 1

The adhesive layer provides the adhesiveness between the bottom electrode and the inter-layer insulator, thereby preventing the above-described problems during the process for forming a capacitor

Methodology Applied
Scientific EffectAdhesion: Adhesive

Implementation Method 2

The adhesive layer can be formed by oxidizing a titanium nitride film

Methodology Applied
Scientific EffectOxidation: Oxidation

Data Source

PatentUS7919385B2Semiconductor device and method of forming the same
Publication Date: 2011.04.05 MICRON TECHNOLOGY INC
  • US7919385B2 patent drawing
  • US7919385B2 patent drawing
  • US7919385B2 patent drawing

AI summary

A semiconductor device includes a first insulating layer, a capacitor, an adhesive layer, and an intermediate layer. The first insulating layer may include a first insulating film. The first insulating layered structure has a first hole. The capacitor is disposed in the first hole. The capacitor may include bottom and top electrodes and a capacitive insulating film. The capacitive insulating film is sandwiched between the bottom and top electrodes. The adhesive layer contacts with the bottom electrode. The adhesive layer has adhesiveness to the bottom electrode. The intermediate layer is interposed between the adhesive layer and the first insulating film. The intermediate layer contacts with the adhesive layer and with the first insulating film. The intermediate layer has adhesiveness to the adhesive layer and to the first insulating film.