Semiconductor Memory Capacitor Charge Accumulation Control
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Solution Overview
Problem
Existing memory devices, such as EEPROMs, suffer from insufficient writing capabilities due to charge accumulation issues in charge accumulation layers, requiring additional writing operations and reading steps to ensure data integrity.
Innovation Solution
A semiconductor device with a capacitor and a switching element, where the switching element is turned on and off in specific periods to accumulate and hold charge, using a dielectric with oxygen and elements like silicon, aluminum, or hafnium, and a transistor structure to manage potential differences and compensate for charge loss, allowing for reliable and efficient data writing without the need for additional reading operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional writing operations and reading steps are performed to ensure data integrity in EEPROM, then writing reliability is improved, but device complexity and operation time increase
Solution Approach 1:
The patent extracts the charge accumulation function from the traditional FETMOS structure into a dedicated capacitor component. This separation allows the capacitor to be optimized specifically for charge storage without the constraints of the transistor structure, enabling reliable charge accumulation in a single writing operation without requiring additional reading and re-writing steps.
Solution Approach 2:
The capacitor is pre-configured with appropriate dielectric materials and electrode structures before operation to ensure sufficient charge accumulation capability. This preliminary design ensures that the charge can be accumulated to the required level in one writing operation, eliminating the need for iterative writing and reading operations.
2Reliability
If charge accumulation layer is used in FETMOS structure, then non-volatile storage is achieved, but writing insufficiency occurs
Solution Approach 1:
The patent separates the charge accumulation function into a distinct capacitor component with optimized dielectric materials. This extraction allows the capacitor to be specifically designed for reliable charge storage, achieving both non-volatile data retention and sufficient writing precision in a single operation.
Solution Approach 2:
The capacitor employs composite dielectric structures with carefully selected materials to optimize both charge retention and writing characteristics. The dielectric layer is designed to provide adequate breakdown voltage for reliable writing while maintaining charge retention capabilities.
3Volume of moving object
If circuit area is reduced to increase storage capacity per unit volume, then device integration is improved, but charge accumulation reliability may deteriorate
Solution Approach 1:
The patent utilizes vertical stacking of the capacitor structure with multiple dielectric layers and electrodes arranged in three dimensions. This dimensional approach increases the effective storage capacity per unit area while maintaining adequate charge accumulation volume and reliability through proper electrical isolation and field distribution.
Solution Approach 2:
The capacitor structure is integrated within the semiconductor device architecture, with the capacitor embedded alongside transistor components. This nested arrangement optimizes space utilization while ensuring the capacitor maintains sufficient physical dimensions for reliable charge accumulation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a highly reliable semiconductor device with reduced circuit area, increased storage capacity per unit volume, and improved data holding characteristics by ensuring saturated charge accumulation and reduced variations in potential differences, enhancing the writing process and storage reliability.
Implementation Method 1
The capacitor includes a first electrode, a second electrode, and a dielectric. The dielectric is positioned between the first electrode and the second electrode.
Implementation Method 2
The switching element includes a first terminal and a second terminal. The first terminal is electrically connected to the first electrode. The method includes a first step of turning on the switching element in a first period, a second step of turning off the switching element in a second period
Data Source
AI summary
Provided is a highly reliable semiconductor device, a semiconductor device with a reduced circuit area, a memory element having favorable characteristics, a highly reliable memory element, or a memory element with increased storage capacity per unit volume. A semiconductor device includes a capacitor and a switching element. The capacitor includes a first electrode, a second electrode, and a dielectric. The dielectric is positioned between the first electrode and the second electrode. The switching element includes a first terminal and a second terminal. The first terminal is electrically connected to the first electrode. The following steps are sequentially performed: a first step of turning on the switching element in a first period, a second step of turning off the switching element in a second period, and a third step of turning on the switching element in a third period.