Semiconductor Capacitor Structure With Self-Aligned Electrode Masking
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Solution Overview
Problem
The manufacturing process of capacitors in semiconductor structures has become increasingly complex, and there is a need to improve the quality of capacitors as memory process nodes shrink, leading to issues with misalignment and high production costs due to the complexity of the dual patterning process.
Innovation Solution
A method is introduced that simplifies the manufacturing process by forming a mask layer on the side wall of the lower electrode, allowing the second stabilizing layer to be etched using this mask, thereby avoiding the dual patterning process and ensuring the stability of the lower electrode, which is achieved by forming a columnar capacitor with a single-layer filling structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dual patterning process is used to manufacture capacitor, then manufacturing precision is improved, but device complexity increases and productivity decreases
Solution Approach 1:
The patent extracts and eliminates the dual patterning process from the manufacturing flow by using a simplified single patterning approach with self-aligned mask formation. The mask is formed directly on the lower electrode side wall after etching the first opening, avoiding the need for separate patterning steps that would increase complexity while maintaining precision.
Solution Approach 2:
The patent performs preliminary actions by pre-forming the mask layer on the lower electrode side wall before final etching operations. This preliminary mask formation ensures precise alignment is achieved in advance, allowing subsequent etching steps to proceed without requiring complex dual patterning processes.
2Manufacturing precision
If dual patterning process is used to manufacture capacitor, then manufacturing precision is improved, but loss of time increases
Solution Approach 1:
The patent removes the time-consuming dual patterning steps from the manufacturing sequence by implementing a streamlined process where the mask is formed in a single patterning step followed by direct etching. This extraction of unnecessary steps reduces production cycle time while preserving alignment precision through self-aligned mask formation.
Solution Approach 2:
The patent skips intermediate patterning steps that would extend production time. By rushing through the process with a simplified single patterning approach and self-aligned mask formation, the method achieves precise capacitor alignment without the time penalty of multiple sequential patterning operations.
3Adaptability or versatility
If lower electrode is made thinner to reduce capacitance, then device integration is improved, but reliability decreases due to collapse risk
Solution Approach 1:
The patent applies beforehand cushioning by forming a support structure (mask layer) on the lower electrode side wall before the electrode can collapse. This preliminary support mechanism prevents structural failure of thin lower electrodes during subsequent processing steps, enabling reduced electrode thickness for higher integration density while maintaining reliability.
Solution Approach 2:
The patent introduces an intermediary support structure (mask layer formed on side wall) that acts as a mediator between the thin lower electrode and the etching process. This intermediary provides mechanical support to prevent collapse during processing, allowing thinner electrodes for better integration while ensuring structural reliability throughout manufacturing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces production costs, simplifies the process, and enhances the stability and quality of the capacitor by preventing the lower electrode from collapsing and allowing for better charge accommodation due to the increased width-to-depth ratio of the columnar capacitor.
Implementation Method 1
A mask layer is formed on a side wall of the exposed lower electrode
Implementation Method 2
The second stabilizing layer is etched by using the mask layer as a mask, so as to form a first opening
Data Source
AI summary
A method for manufacturing a semiconductor structure and a semiconductor structure are provided. The method includes: providing a substrate, and forming a first isolating layer, a first stabilizing layer, a second isolating layer and a second stabilizing layer, which are sequentially stacked onto one another, on the substrate; forming a through hole penetrating through the first isolating layer, the first stabilizing layer, the second isolating layer and the second stabilizing layer, and forming a lower electrode on a side wall and a bottom portion of the through hole; removing a portion of a thickness of the second stabilizing layer to expose a portion of the lower electrode; forming a mask layer on a side wall of the exposed lower electrode; and etching the second stabilizing layer by using the mask layer as a mask to form a first opening.