Semiconductor Capacitor Contact With Ge Assistant Layer Overlay Margin
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Solution Overview
Problem
The challenge in scaling down semiconductor devices is to achieve improved quality, yield, performance, and reliability while reducing complexity, particularly in reducing the resistance of capacitor structures and increasing the overlay window between contact and capacitor structures.
Innovation Solution
A semiconductor device design incorporating an assistant layer made of germanium or silicon germanium between the contact and capacitor structures, formed through a method involving sequential dielectric layer deposition and selective formation of the assistant layer using a germanium precursor, which reduces the resistance and exposed area of the capacitor structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the dimensions of semiconductor devices are scaled down to meet increasing computing demand, then computing ability is improved, but quality, yield, performance, and reliability deteriorate while complexity increases
Solution Approach 1:
An assistant layer comprising germanium or silicon germanium is introduced between the contact structure and the capacitor structure. This intermediary layer serves as a mediator that improves electrical contact and reduces resistance, thereby maintaining performance and reliability even as device dimensions are scaled down to increase computing ability.
Solution Approach 2:
The invention changes the material parameter by introducing germanium or silicon germanium with different electrical properties than traditional materials. This parameter change enables reduced resistance and improved electrical characteristics, allowing devices to maintain reliability during scaling to achieve higher computing ability.
2Reliability
If the resistance of capacitor structures is reduced to improve performance, then device performance is improved, but the exposed area of the capacitor structure increases
Solution Approach 1:
The assistant layer is selectively formed only in the contact region where electrical connection is needed, rather than uniformly across the entire capacitor structure. This local application reduces resistance at the critical contact interface while maintaining the original exposed area boundaries, thus improving performance without increasing the capacitor's footprint.
Solution Approach 2:
The assistant layer acts as an intermediary material that provides low-resistance electrical contact between the contact structure and the capacitor structure. By confining this low-resistance path to the contact region through selective formation, the invention reduces overall resistance while preserving the original capacitor exposed area.
3Adaptability or versatility
If the exposed area of the capacitor structure is reduced to increase overlay window, then design flexibility is improved, but the resistance of the capacitor structure increases
Solution Approach 1:
The assistant layer serves as a compensating intermediary that offsets the increased resistance resulting from reduced exposed area. By providing a low-resistance conductive path at the contact interface, it enables the capacitor structure to maintain low overall resistance even when the exposed area is minimized for improved overlay window and design flexibility.
Solution Approach 2:
The invention changes the electrical resistance parameter at the contact interface by introducing germanium or silicon germanium material. This parameter change compensates for the increased resistance that would normally result from reduced exposed area, thereby enabling both small exposed area for design flexibility and low resistance for reliable performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The assistant layer effectively reduces the resistance of the capacitor structure, allowing for a larger overlay window between the contact and capacitor structures, enhancing design flexibility and performance.
Implementation Method 1
the resistance of the capacitor structure may be reduced by employing the assistant layer formed on the exposed portion of the capacitor structure
Implementation Method 2
selectively forming an assistant layer on the exposed portion over the second dielectric layer and the higher dielectric layer... introducing a reactive gas to the contact opening, and the reactive gas comprises a germanium precursor
Data Source
AI summary
The present application provides a method for fabricating a semiconductor device. The method includes providing a first substrate; sequentially stacking a lower dielectric layer, a first dielectric layer, and a higher dielectric layer on the first substrate; forming a capacitor structure on the first substrate, along the lower dielectric layer, the first dielectric layer, and the higher dielectric layer, and extending upwardly from the higher dielectric layer; forming a second dielectric layer on the higher dielectric layer; forming a contact opening along the second dielectric layer to expose an exposed portion of the capacitor structure; selectively forming an assistant layer on the exposed portion over the second dielectric layer and the higher dielectric layer; forming a contact structure on the exposed portion and in the contact opening; and forming a bonding structure on the contact structure.