3D Stacked Capacitor Electrodes for Semiconductor Storage Density
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high data storage capacities while maintaining improved electrical properties and reliability.
Innovation Solution
The semiconductor device incorporates a first semiconductor structure with a substrate, active region, circuit devices, impurity regions, and a capacitor structure on the device isolation region, vertically overlapping it. Additionally, a second semiconductor structure includes a plate layer, gate electrodes, channel structures, and an upper interconnection structure, with the capacitor structure featuring alternately arranged capacitor electrodes and an insulating structure between them.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cells are arranged three-dimensionally to increase data storage capacity, then data storage capacity is improved, but device complexity increases
Solution Approach 1:
The patent transitions from two-dimensional memory cell arrangement to three-dimensional arrangement by stacking multiple memory cell layers vertically. This dimensional change allows significantly increased storage capacity within the same footprint area, addressing the need for higher density while managing complexity through systematic layer stacking
Solution Approach 2:
The memory device is divided into multiple discrete memory cell layers, each functioning as an independent storage unit. This segmentation allows the complex three-dimensional structure to be managed as repeating modular units, simplifying manufacturing and design while achieving high capacity through vertical stacking
2Reliability
If capacitor structure is added on device isolation region to improve electrical properties, then electrical properties are improved, but manufacturing complexity increases
Solution Approach 1:
The capacitor structure is integrated with the device isolation region, combining two previously separate components into a unified structure. The capacitor electrodes are formed within the isolation region boundaries, merging the isolation function with capacitor functionality, thereby improving electrical properties without proportionally increasing manufacturing complexity
Solution Approach 2:
The device isolation region serves dual purposes: providing electrical isolation between devices and housing the capacitor structure. This multi-functionality eliminates the need for separate capacitor fabrication steps in some cases, improving electrical properties while controlling manufacturing complexity through process integration
Data Source
AI summary
A semiconductor device may include a first semiconductor structure including a substrate, an active region in the substrate, a device isolation region defining the active region, and a capacitor structure on the device isolation region and vertically overlapping the device isolation region. The capacitor structure may include a first electrode structure extending in a first direction and including first capacitor electrodes stacked in the first direction, a second electrode structure including second capacitor electrodes stacked in the first direction, and a first insulating structure between the first electrode structure and the second electrode structure. Each of the first capacitor electrodes and the second capacitor electrodes are alternately arranged and spaced apart from each other in a second direction parallel to an upper surface of the substrate, extend in a third direction perpendicular to the first direction and the second direction, and has a plate shape.