Semiconductor Chip Insulating Layer for Resin Permeation Prevention

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Solution Overview

Problem

In semiconductor devices, resin permeation into connection electrodes during the sealing process leads to contamination and residue formation, causing connection failures and yield degradation due to insufficient adhesion and misalignment issues with pressure-sensitive adhesive sheets.

Innovation Solution

A method involving a resin-permeation preventing insulating layer is applied to cover the semiconductor chip's back and side surfaces, blocking resin permeation and ensuring firm adhesion, which is then sealed with a resin substrate, preventing misalignment and contamination during the manufacturing process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the semiconductor chip is sealed with resin directly after temporary fixing, then the sealing process is simple and fast, but the resin permeates the connection electrodes through the boundary between the chip and pressure-sensitive adhesive sheet, causing contamination

Engineering Contradiction:
Improvesealing process efficiencyVSAvoidconnection electrode cleanliness
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

A resin-permeation preventing insulating layer is introduced as an intermediary between the semiconductor chip and the resin substrate. This insulating layer acts as a barrier that prevents resin from permeating into the connection electrodes while still allowing the sealing process to proceed efficiently. The insulating layer is formed to extend from the back surface to the side surfaces of the chip, creating a protective barrier at the boundary where resin permeation would occur.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If the pressure-sensitive adhesive sheet is used for temporary fixing, then the chip can be easily positioned and fixed, but misalignment occurs between the chip and the adhesive sheet, leading to resin permeation issues

Engineering Contradiction:
Improvechip positioning and fixingVSAvoidchip-adhesive sheet alignment
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The resin-permeation preventing insulating layer is formed in advance on the semiconductor chip before the sealing process. This preliminary action ensures that even if misalignment occurs between the chip and pressure-sensitive adhesive sheet, the insulating layer will prevent resin from permeating into the connection electrodes. The insulating layer is prepared beforehand to cover potential misalignment areas.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If the connection electrodes are exposed for build-up wiring formation, then direct connection to electrodes is achieved, but resin residue in via holes causes connection failure

Engineering Contradiction:
Improveelectrode connection reliabilityVSAvoidvia hole residue formation
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The resin-permeation preventing insulating layer converts the potential harm of resin permeation into a beneficial barrier function. By preventing resin from entering the connection electrodes and via holes during the sealing process, the insulating layer ensures that the connection electrodes remain clean and free of resin residue, enabling reliable build-up wiring formation without connection failures.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively prevents resin permeation, maintains connection electrode cleanliness, and ensures reliable build-up wiring formation, reducing yield loss and improving the semiconductor device's reliability and thickness reduction.

Implementation Method 1

forming a resin substrate sealing a periphery and a back surface side of the semiconductor chip, on the insulating layer

Methodology Applied
Scientific EffectPhysical Containment: Physical Containment

Data Source

PatentUS8536715B2Semiconductor device and method of manufacturing the same
Publication Date: 2013.09.17 SHINKO ELECTRIC IND CO LTD
  • US8536715B2 patent drawing
  • US8536715B2 patent drawing
  • US8536715B2 patent drawing

AI summary

A method of manufacturing a semiconductor device, includes temporarily fixing a semiconductor chip to a supporting member to direct a connection electrode toward the supporting member side, forming an insulating layer for preventing resin-permeation covering the semiconductor chip, on the supporting member and the semiconductor chip, forming a resin substrate sealing a periphery and a back surface side of the semiconductor chip, on the insulating layer, and removing the supporting member to expose the connection electrode of the semiconductor chip. A build-up wiring is connected directly to the connection electrode of the semiconductor chip.