Optoelectronic Semiconductor Chip Nanostructured Conversion Layer
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Solution Overview
Problem
Conventional semiconductor chips with conversion layers suffer from increased losses due to scattered and converted light, suboptimal thermal connection, and efficiency losses from aging effects like cracking of the matrix material.
Innovation Solution
An optoelectronic semiconductor chip with a semiconductor layer stack and a conversion layer where the conversion layer is integrated into a nanostructuring of nanorods and indentations on the radiation exit side, providing improved optical and thermal coupling and enhanced conversion efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a conversion layer is applied as a separate layer using resin or silicone, then the conversion function is achieved, but thermal connection and optical coupling are suboptimal leading to efficiency losses
Solution Approach 1:
The conversion layer is merged with the semiconductor chip by integrating it into the nanostructuring directly on the radiation exit side, eliminating the need for separate resin or silicone bonding layers. This integration improves both thermal connection and optical coupling while reducing the overall structural complexity of the conversion layer assembly.
Solution Approach 2:
The nanostructuring serves as an intermediary structure that enables direct integration of the conversion layer with the semiconductor chip. The nanorods and indentations create a interface that simultaneously improves thermal conduction and optical coupling, mediating between the semiconductor layer stack and the conversion layer without requiring additional bonding materials.
2Illumination intensity
If a conventional conversion layer is used with matrix material, then conversion is achieved, but scattering losses increase and color homogeneity decreases
Solution Approach 1:
The conversion layer is selectively positioned within the nanostructuring features (nanorods and indentations) rather than being uniformly applied. This local placement optimizes the conversion function in specific regions while minimizing scattering losses in other areas, thereby improving color homogeneity and reducing energy loss from scattered light.
Solution Approach 2:
The conversion layer is integrated into the three-dimensional nanostructuring on the radiation exit side, utilizing the vertical and lateral dimensions of the nanorods and indentations. This dimensional integration allows for optimized light conversion while controlling scattering, achieving better color homogeneity without significant energy loss.
3Temperature
If conversion layer is bonded with silicone adhesive, then mechanical attachment is achieved, but thermal connection is suboptimal
Solution Approach 1:
The conversion layer is merged directly with the semiconductor chip through the nanostructuring interface, eliminating the need for silicone adhesive bonding. This direct integration establishes optimal thermal connection between the conversion layer and the semiconductor chip while simplifying the manufacturing process by removing the bonding step.
Solution Approach 2:
The nanostructuring interface acts as a thermal mediator, providing a direct thermal conduction path between the semiconductor layer stack and the conversion layer. This intermediary structure enables efficient heat transfer without requiring thermal conductive adhesives, improving thermal connection while maintaining ease of manufacture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces scattering losses, achieves better color homogeneity, improves thermal connection, and enables full conversion of radiation, leading to increased efficiency and cost-effectiveness, particularly suitable for high-luminance applications like projection and lighting.
Implementation Method 1
a conversion layer (3), which is arranged on the radiation exit side (21) of the semiconductor layer stack and is suitable for converting at least part of the radiation emitted by the active layer into radiation of a different wavelength
Implementation Method 2
The radiation exit side of the semiconductor layer stack has a first nanostructuring (4). The conversion layer (3) is arranged in the first nanostructuring (4).
Implementation Method 3
achieves better color homogeneity, improves thermal connection, and enables full conversion of radiation
Data Source
Figure 1A~1D
Figure 2A~2C
Figure 3A~3D
AI summary
The invention relates to an optoelectronic semiconductor chip (10), which comprises a semiconductor layer stack (2) and a conversion layer (3). The semiconductor layer stack (2) comprises an active layer (2a) for generating radiation. The conversion layer (3) is arranged on a radiation emission side (21) of the semiconductor layer stack (2), wherein the conversion layer (3) is suitable for converting at least a portion of the radiation emitted by the active layer (2a) into radiation having a different wavelength. The radiation emission side (21) of the semiconductor layer stack (2) has a first nanostructuring, wherein the conversion layer (3) is arranged in said first nanostructuring (4). The invention further relates to a method for producing such a semiconductor chip (10).