Semiconductor Chip Temperature Control Using Parasitic Diode
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Solution Overview
Problem
Conventional semiconductor device testing methods face challenges in accurately and efficiently stabilizing the temperature of semiconductor chips at a predetermined temperature due to the temperature drop caused by probe terminals, leading to prolonged preheating times and potential erroneous testing results, especially at the initial stages of device operation.
Innovation Solution
A method involving the use of probe terminals where the temperature of the semiconductor chip is measured using a parasitic diode's temperature characteristics, and controlled heating is applied to compensate for the temperature drop, ensuring the chip reaches and maintains the target temperature within a short time, thereby allowing accurate electrical characteristic testing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If probe terminals are brought into contact with the semiconductor chip to test electrical characteristics, then electrical testing can be performed, but the temperature of the semiconductor chip drops due to heat absorption by the probe terminals
Solution Approach 1:
The semiconductor chip is preheated to a temperature higher than the target test temperature before the probe terminals are brought into contact. This preliminary heating action compensates for the anticipated temperature drop when the cooler probe terminals contact the chip, ensuring the chip maintains the correct test temperature throughout the electrical characteristic measurement process
2Temperature
If the semiconductor chip is preheated to compensate for temperature drop, then temperature stability during testing is improved, but the preheating time increases
Solution Approach 1:
A temperature detection device continuously monitors the temperature of the semiconductor chip during preheating and testing. This feedback mechanism allows the system to detect when the chip reaches the target temperature and automatically end the preheating process, preventing unnecessary extended heating time while ensuring temperature stability is achieved
3Measurement precision
If preheating time is extended to ensure temperature stability, then testing accuracy is improved, but productivity decreases
Solution Approach 1:
The temperature detection device provides real-time feedback on chip temperature, allowing the system to precisely determine when preheating is complete. This eliminates excessive preheating time while ensuring the chip reaches the required test temperature, thereby maintaining measurement accuracy while improving testing throughput
Solution Approach 2:
By preheating the chip to a higher temperature before contact with probe terminals, the system compensates for the temperature drop in advance. This preliminary action reduces the actual preheating time needed after contact, thereby improving productivity without sacrificing measurement precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces preheating time and ensures that electrical characteristics are tested at a stable temperature, preventing incorrect determinations of semiconductor chip defects and enabling efficient high-temperature testing.
Implementation Method 1
obtaining a temperature of the semiconductor chip by measuring electrical characteristics of the diode through at least one of the front electrodes and the back surface electrode and by referring to prescribed temperature characteristics of the diode
Implementation Method 2
heating up the semiconductor chip by applying voltage between one or more of the front surface electrodes and the back surface electrode
Data Source
AI summary
A method for testing a semiconductor chip that has a pn junction constituting a parasitic diode therein includes: causing probe terminals to be in contact with front surface electrodes of the semiconductor chip; obtaining a temperature of the semiconductor chip by measuring electrical characteristics of the parasitic diode through at least one of the front surface electrodes and a back surface electrode and by referring to prescribed temperature characteristics of the parasitic diode; if the obtained temperature is not within a prescribed tolerance from the predetermined target temperature, heating up the semiconductor chip by applying voltage between one or more of the front surface electrodes and the back surface electrode; and once the obtained temperature increases and reaches the predetermined target temperature within the prescribed tolerance, testing electrical characteristics of the semiconductor chip through the front surface electrodes and the back surface electrode.