Semiconductor Chip Thermal Management Via Through-Vias

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Solution Overview

Problem

Existing semiconductor devices face challenges in efficiently dissipating heat generated by transistors, as the heat transfer path often has a small area, leading to high thermal resistance and reduced performance due to self-heating during operation.

Innovation Solution

A semiconductor device design incorporating a heat-conductive film, insulating film, bump, and heat-conductive member with higher thermal conductivity than the substrate, which allows heat to be transferred both laterally and in the thickness direction, efficiently dissipating heat through a through via-hole and bump to the outside.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If a conventional heat transfer path is used through the bump and terminal, then heat dissipation is achieved, but the thermal resistance remains high due to the small area at the emitter or source connection

Engineering Contradiction:
Improvetransistor operating temperatureVSAvoidheat dissipation efficiency
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The patent introduces a through via-hole extending from the lower surface to the upper surface of the semiconductor substrate, creating a new heat dissipation dimension. Heat-conductive members are disposed within the through via-hole to conduct heat from the active element region through the substrate thickness, enabling heat to escape in the vertical dimension rather than relying solely on lateral heat transfer through the bump connection.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

Heat-conductive members are introduced as intermediary structures within the through via-hole. These members act as thermal mediators between the active element region and the lower surface of the substrate, providing a dedicated high thermal conductivity path that bridges the thermal gap and improves heat transfer efficiency without interfering with the electrical connection function of the bump.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If the heat transfer path area is increased, then thermal resistance decreases, but the device structure becomes more complex

Engineering Contradiction:
Improveheat dissipation efficiencyVSAvoidheat dissipation structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The heat-conductive members are nested within the through via-hole structure, which itself is integrated into the semiconductor substrate. This nested arrangement allows the heat dissipation function to be embedded within the existing device architecture without requiring additional external structures or significantly increasing the device footprint.

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The through via-hole structure serves multiple functions: it provides a mechanical support structure, creates a pathway for heat conduction, and can be integrated with existing electrical interconnect structures. The heat-conductive members within the via-hole simultaneously conduct heat and can serve as part of the electrical grounding structure, combining thermal and electrical functions in a single integrated design.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design effectively reduces thermal resistance and suppresses temperature increase in transistors, enhancing heat dissipation and maintaining semiconductor chip performance.

Implementation Method 1

a heat-conductive film that is disposed on the first surface of the substrate at a position different from a position of the active element and that is made of a material having a higher thermal conductivity than the substrate

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

an insulating film that is disposed on the first surface of the substrate and that covers the active element and the heat-conductive film

Methodology Applied
Scientific EffectElectrical insulation: Dielectric

Data Source

PatentUS10957617B2Semiconductor device
Publication Date: 2021.03.23 MURATA MFG CO LTD
  • US10957617B2 patent drawing
  • US10957617B2 patent drawing
  • US10957617B2 patent drawing

AI summary

A semiconductor chip includes an active element on a first surface of a substrate. A heat-conductive film having a higher thermal conductivity than the substrate is disposed at a position different from a position of the active element. An insulating film covering the active element and heat-conductive film is disposed on the first surface. A bump electrically connected to the heat-conductive film is disposed on the insulating film. A via-hole extends from a second surface opposite to the first surface to the heat-conductive film. A heat-conductive member having a higher thermal conductivity than the substrate is continuously disposed from a region of the second surface overlapping the active element in plan view to an inner surface of the via-hole. The bump is connected to a land of a printed circuit board facing the first surface. The semiconductor chip is sealed with a resin.