Semiconductor Device Collector Region Doping Gradient
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Solution Overview
Problem
Conventional semiconductor devices face challenges in achieving optimal breakdown voltage and turn-off withstand capability, particularly when miniaturized or with reduced edge region area, due to uneven doping concentrations in collector regions, leading to potential device destruction from avalanche breakdown.
Innovation Solution
The semiconductor device incorporates a first collector region with a higher doping concentration than a second collector region, extending into the inactive region, to enhance avalanche capability and lower breakdown voltage in the active region, while maintaining adequate breakdown voltage in the edge region, using a specific doping concentration gradient and structural layout.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the edge region area is reduced to miniaturize the device, then device size is reduced, but breakdown voltage and turn-off withstand capability deteriorate due to uneven doping concentrations
Solution Approach 1:
The patent applies local quality by creating distinct doping concentration zones within the collector region. A first collector region with higher doping concentration (1E16 to 1E18 atoms/cm³) is positioned in the active region, while a second collector region with lower doping concentration (1E14 to 1E16 atoms/cm³) is positioned in the edge region. This localized differentiation allows the active region to achieve lower breakdown voltage for improved avalanche capability, while the edge region maintains adequate breakdown voltage even when miniaturized.
Solution Approach 2:
The collector region is segmented into two functionally distinct regions: a first collector region extending into the active region with higher doping concentration, and a second collector region in the edge region with lower doping concentration. This segmentation allows independent optimization of electrical characteristics in different functional zones, enabling device miniaturization without compromising overall reliability.
2Ease of manufacture
If uniform doping concentration is used in collector regions, then manufacturing is simplified, but avalanche capability is reduced due to uneven current distribution
Solution Approach 1:
Rather than using uniform doping throughout the collector region, the patent implements local quality by specifying different doping concentration ranges for different collector regions. The first collector region uses higher doping concentration (1E16 to 1E18 atoms/cm³) to enhance avalanche capability in the active region, while the second collector region uses lower doping concentration (1E14 to 1E16 atoms/cm³) to maintain breakdown voltage in the edge region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves avalanche capability and turn-off withstand capability by managing avalanche current distribution, reducing the risk of device destruction and maintaining effective breakdown voltage across regions.
Implementation Method 1
improve avalanche capability and turn-off withstand capability by managing avalanche current distribution
Implementation Method 2
lower breakdown voltage in the active region, while maintaining adequate breakdown voltage in the edge region
Data Source
AI summary
Provided is a semiconductor device comprising an active region and an edge region, the semiconductor device comprising: a drift region of a first conductivity type provided in the semiconductor substrate; a base region of a second conductivity type provided above the drift region; a first collector region of the second conductivity type provided below the drift region in the active region; and a second collector region of the second conductivity type provided below the drift region in the edge region, wherein a doping concentration of the first collector region is higher than a doping concentration of the second collector region, wherein an area of the first collector region is of the same size as an area of the second collector region or larger than the area of the second collector region, in a top plan view.