Thyristor TRIZ Cases
- Semiconductor Device Collector Region Doping Gradient
A semiconductor device uses distinct collector region doping concentrations to manage avalanche current distribution.
- SiC Thyristor Carrier Injection Layer for Thermal Stability
Optimized carrier injection layer reduces minority carrier injection in silicon carbide thyristors.
- Vertical Thyristor With Segmented Fourth Region for Heat Dissipation
Segmenting the fourth semiconductor region with continuous corridors concentrates hot spots, enabling easier wire soldering and faster turn-on speed.
- IGTO Turn-Off Using P-Channel MOSFET to Prevent Latch-Up
A P-channel MOSFET shorts the NPN base-emitter junction in an IGTO device for reliable turn-off control.
- Natively Doped High-Resistance Substrate for Latch-Up Prevention
High-resistance natively doped regions isolate parasitic bipolar transistors to prevent latch-up without increasing chip area or adding process steps.
- Light Emitting Thyristor Island Structures for High Density Arrays
Vertical stacking of light emitting thyristors within segmented island structures increases array density while maintaining individual light emission output.