Semiconductor Column Formation via Segmented Mask Etching
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Solution Overview
Problem
Current semiconductor arrangements face challenges in efficiently forming semiconductor columns with precise control over mask material patterning and etching processes, which affects the formation of vertical transistors with optimal channel structures.
Innovation Solution
The method involves forming multiple mask regions with specific materials like SiO2 and Si3N3, patterning them to create openings, and then using chemical-mechanical planarization and etching techniques to form semiconductor columns with controlled distances and orientations, allowing for the creation of vertical gate all-around (VGAA) transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple mask regions with different materials are formed and patterned to create precise openings, then manufacturing precision of semiconductor columns is improved, but device complexity and process difficulty increase
Solution Approach 1:
The patent divides the mask structure into multiple distinct regions (first mask region, second mask region, third mask region) with different materials (SiO2, Si3N4, etc.) deposited at different stages. Each mask region serves a specific function in the patterning sequence, allowing precise control over where openings are formed and how etching proceeds to create the vertical column structures with controlled dimensions and orientations.
Solution Approach 2:
The patent performs preliminary deposition of multiple mask materials in specific sequences before the final patterning step. The first and second mask regions are formed and partially removed before forming the third mask region, establishing a prepared structure that guides subsequent etching processes to achieve the desired column geometries without requiring complex real-time adjustments.
2Manufacturing precision
If chemical-mechanical planarization and etching techniques are used to form vertical columns with controlled dimensions, then manufacturing precision is improved, but loss of time in the fabrication process increases
Solution Approach 1:
The patent performs chemical-mechanical planarization after depositing the first and second mask materials to create a flat surface before forming the third mask region and performing etching. This preliminary planarization ensures that subsequent etching proceeds uniformly across the substrate, achieving controlled column dimensions in a single etching step rather than requiring multiple iterative adjustments, thus reducing total process time while maintaining precision.
Solution Approach 2:
The patent uses the layered mask structure (multiple materials in sequence) as an intermediary that guides the etching process to create the vertical columns with precise dimensions. The different mask materials have different etch selectivities, allowing the etching process to automatically conform to the desired column geometry without requiring complex real-time control, thereby achieving precision efficiently.
3Adaptability or versatility
If gate electrodes are formed to encircle vertical columns with encircled portions forming channels, then functionality of vertical transistors is improved, but device complexity increases
Solution Approach 1:
The gate electrode structure is segmented into different portions that perform different functions: some portions encircle the vertical column to form the channel region, while other portions are positioned to create the vertical transistor structure. This segmentation allows the single gate electrode to simultaneously provide multiple functions (channel formation, gate control, vertical transistor operation) without requiring separate structures for each function, thus improving functionality while managing complexity.
Solution Approach 2:
The gate electrode is designed as a multi-functional structure that simultaneously serves as the channel-forming element, the gate control element, and the vertical transistor structure. By making the gate electrode universal in its function rather than requiring separate dedicated structures for each function, the patent achieves high transistor functionality while avoiding the complexity that would arise from multiple separate components.
Data Source
AI summary
A semiconductor arrangement comprises a substrate region and a first semiconductor column projecting from the substrate region. The semiconductor arrangement comprises a second semiconductor column projecting from the substrate region. The second semiconductor column is separated a first distance from the first semiconductor column. The first distance is between about 10 nm to about 30 nm.