Semiconductor Comb-Like Channel Structure for Fin Collapse

The patent transitions from a conventional planar fin structure to a three-dimensional comb-like channel structure with vertical fins and lateral channels. This dimensional change allows the channel to extend in multiple directions (vertical fin height and lateral channel length), providing sufficient drive current through increased channel volume while maintaining structural integrity through the interconnected comb design that distributes mechanical stress.

The comb-like channel structure creates a porous three-dimensional network with channels extending vertically and laterally. This porous architecture increases the effective channel area for current conduction while maintaining sufficient spacing between channel segments, allowing heat to dissipate through the open structure and preventing severe self-heating even as device density increases.

The patent divides the channel structure into segmented comb-like formations with vertical fins and lateral channels rather than a single continuous high fin. This segmentation breaks down the manufacturing challenges into smaller, more manageable sections where etching can be better controlled, while still achieving high area efficiency through the compact three-dimensional arrangement of multiple channel segments.