Semiconductor Command Decoder and Voltage Generation Circuit

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Solution Overview

Problem

Current semiconductor devices lack efficient command decoding and voltage generation capabilities, particularly in generating and terminating read and program voltage signals, which affects the performance of nonvolatile memory operations.

Innovation Solution

A semiconductor device incorporating a command decoder, row decoder, page buffer unit, and voltage generation circuit that decodes external command signals to generate preparation, voltage control, read, and program signals, and pre-charges bit lines to execute read and program operations, while terminating voltage signals as needed.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If voltage generation circuit continuously generates read and program voltage signals, then memory operations can be executed, but operation time increases and productivity decreases

Engineering Contradiction:
Improveoperation speedVSAvoidvoltage signal generation time
Core Design Contradiction:
ProductivityVSLoss of time

Solution Approach 1:

The voltage generation circuit generates read and program voltage signals in advance based on the preparation signal before actual read or program operations are initiated. This preliminary generation of voltage signals eliminates waiting time during actual operations, thereby improving productivity while managing the timing of voltage signal generation to avoid unnecessary continuous generation.

Inventive Principle:
Principle #10Preliminary action

2Ease of operation

If command decoder generates all control signals simultaneously, then operation preparation is complete, but energy consumption increases

Engineering Contradiction:
Improveoperation preparation efficiencyVSAvoidenergy consumption
Core Design Contradiction:
Ease of operationVSUse of energy by moving object

Solution Approach 1:

The command decoder dynamically generates control signals based on the logic combination of external command signals received. Rather than generating all signals simultaneously, the decoder selectively enables and generates specific signals (preparation signal, voltage control signal, read signal, program signal, buffer control signal) according to the actual operation requirements, thereby reducing energy consumption while maintaining operational efficiency.

Inventive Principle:
Principle #15Dynamics

3Reliability

If voltage generation circuit generates high voltage signals for program operation, then program operation can be executed, but energy consumption and heat generation increase

Engineering Contradiction:
Improveprogram operation capabilityVSAvoidenergy loss
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The voltage generation circuit generates high voltage program signals only during the specific time period when program operations are required, controlled by the voltage control signal. The circuit terminates voltage signal generation when operations are completed, using periodic activation based on command decoder control rather than continuous generation, thereby reducing energy loss and heat generation while maintaining program operation capability.

Inventive Principle:
Principle #19Periodic action

Data Source

PatentUS9159386B2Semiconductor devices and reduction of operation times
Publication Date: 2015.10.13 SK HYNIX INC
  • US9159386B2 patent drawing
  • US9159386B2 patent drawing
  • US9159386B2 patent drawing

AI summary

The semiconductor device includes a command decoder and a voltage generation circuit. The command decoder may be suitable for decoding external command signals to generate a preparation signal and a voltage control signal. The voltage generation circuit may be suitable for generating a read voltage signal used in a read operation and a program voltage signal used in a program operation in response to the preparation signal. In addition, the voltage generation circuit may terminate generation of the read voltage signal and the program voltage signal in response to the voltage control signal.