Semiconductor Device Common Source Region Layout
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor devices require large layout areas due to serially connected bar-shaped gate structures, leading to lower integration levels and increased costs, making it difficult to miniaturize while maintaining performance.
Innovation Solution
A semiconductor device design featuring a substrate with alternating doped regions and a gate structure, where contacts connect in parallel to the gate, reducing the layout area by sharing a common source region and allowing for compact layout without compromising performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If bar-shaped gate structures are serially connected through contacts, then the device can be fabricated with conventional processes, but the layout area and chip area become large
Solution Approach 1:
The patent merges multiple source regions into a single common source region that is shared by multiple MOS devices. Instead of having separate source regions for each device connected through contacts, the invention combines them into one integrated region, thereby reducing the overall layout area while maintaining electrical connectivity through the shared source region.
Solution Approach 2:
The common source region serves multiple functions simultaneously: it acts as the source region for multiple MOS devices, provides a shared electrical connection point, and eliminates the need for intermediate contacts. This multi-functional design reduces the number of components and simplifies the overall device structure.
2Reliability
If serial connection through contacts is used, then device performance can be maintained, but integration level decreases and costs increase
Solution Approach 1:
By merging multiple source regions into a single common source region, the patent achieves higher integration density on the chip. This consolidation allows more devices to be packed into the same area, improving the integration level and reducing manufacturing costs per device while preserving the electrical performance through the shared source connection.
Data Source
AI summary
A semiconductor device includes a substrate of a first conductivity type, a first doped region of a second conductivity type, at least one second doped region of the first conductivity type, a third doped region of the second conductivity type, a gate structure, and at least one contact. The first and the second doped regions are configured in the substrate, and each second doped region is surrounded by the first doped region. The third doped region is configured in the substrate outside of the first doped region. The gate structure is disposed on the substrate between the first and third doped regions. The contact is disposed on the substrate. Each contact connects, in a direction parallel to the gate structure, the first and second doped regions alternately.