Semiconductor Conductive Contact Fabrication via Impurity Doping
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Solution Overview
Problem
The existing methods for fabricating semiconductor devices with resistance variable elements are complex and costly, particularly in forming conductive contacts, which limits the degree of integration and increases processing time and manufacturing costs due to the need for multiple masking and etching processes, especially when forming contacts at larger distances from the substrate.
Innovation Solution
A method involving the formation of conductive patterns and resistance variable elements with impurity doping to create conductive contacts, simplifying the process by using a mask pattern for impurity doping and forming conductive contacts with larger plane areas, reducing the need for complex masking and etching processes and allowing for increased integration by forming conductive contacts and pads simultaneously with resistance variable elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to form conductive contacts, then the contacts can be formed, but the fabrication process becomes complex and costly due to multiple masking and etching processes
Solution Approach 1:
The patent combines the formation of conductive contacts and resistance variable elements into a single integrated structure. The conductive contact and resistance variable element are formed simultaneously through a unified fabrication process, eliminating the need for separate masking and etching steps that would otherwise be required to form these structures independently.
Solution Approach 2:
The resistance variable element serves multiple functions: it acts as both the functional resistance element and defines the conductive contact structure. By making the conductive contact have substantially the same sidewall shape as the resistance variable element, the structure performs both electrical connection and resistance function without requiring additional processing steps.
2Manufacturing precision
If multiple masking and etching processes are used to form conductive contacts at larger distances from the substrate, then the contacts can be formed, but processing time and manufacturing costs increase
Solution Approach 1:
The conductive contact structure is formed in advance as part of the resistance variable element fabrication process. By establishing the conductive contact's sidewall shape concurrently with the resistance variable element formation, the patent eliminates subsequent time-consuming masking and etching operations that would be needed to create separate contact structures.
3Manufacturing precision
If conventional conductive contact formation methods are used, then contacts can be formed, but the degree of integration is limited due to process complexity
Solution Approach 1:
The patent merges the conductive contact and resistance variable element into a single integrated structure where the contact's sidewall shape mirrors that of the resistance variable element. This integration allows for higher density device arrangements and improved scalability without requiring additional fabrication complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the fabrication process, reduces processing costs and time, and enhances the degree of integration by eliminating the need for additional masking and etching steps, while maintaining the functionality of conductive contacts and resistance variable elements.
Implementation Method 1
a resistance variable element to be switched between different resistance states according to an applied voltage or current
Implementation Method 2
performing impurity doping into the second resistance variable element to produce a conductive contact
Data Source
AI summary
A method for fabricating a semiconductor device includes forming a first conductive pattern and a first pad over a substrate; forming a first and a second resistance variable elements over the first conductive pattern and the first pad, respectively; performing impurity doping into the second resistance variable element to produce a conductive contact; and forming a second conductive pattern over the first resistance variable element.