Semiconductor Conductive Pattern Void Reduction via Out-Gassing
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Solution Overview
Problem
Voids in conductive patterns within semiconductor devices can cause malfunctions due to the formation of by-products during the deposition and etching processes, leading to defects and reduced reliability of the semiconductor device.
Innovation Solution
A method involving the formation of conductive patterns between interlayer insulating layers, where a first by-product is reacted with source gas to form a second by-product, followed by an out-gassing process to remove the second by-product, and sealing with a sealing insulating layer to prevent voids and enhance device reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conductive layer is deposited using CVD or ALD method, then the conductive patterns can be formed in interlayer spaces, but voids are generated in the conductive layer due to by-product accumulation
Solution Approach 1:
The patent performs a preliminary out-gassing process before sealing the conductive patterns to remove by-products. This preliminary action prevents void formation during subsequent sealing operations, resolving the contradiction between forming conductive patterns and preventing voids.
Solution Approach 2:
The patent extracts by-products from the conductive layer through an out-gassing process using vacuum and temperature control. This extraction removes harmful by-products that would otherwise cause voids, maintaining both manufacturing precision and reliability.
2Reliability
If the conductive layer is sealed with an insulating layer, then the conductive patterns are protected, but by-products remain trapped causing voids
Solution Approach 1:
The out-gassing process is performed as a preliminary step before sealing. This sequence ensures by-products are removed before the insulating layer is deposited, preventing void formation while maintaining the protective function of sealing.
Solution Approach 2:
The patent uses controlled heating during out-gassing to convert trapped by-products into removable gaseous forms. This transforms the harmful trapped by-products into beneficial removable gases, eliminating voids while maintaining sealing integrity.
3Reliability
If out-gassing is performed to remove by-products, then voids are reduced, but additional process steps are required
Solution Approach 1:
The patent combines the out-gassing process with existing manufacturing steps by performing it in-situ before sealing. This integration adds minimal complexity while achieving significant void reduction, balancing reliability improvement with process simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively minimizes voids in conductive patterns, improving the semiconductor device's operating characteristics and reducing defect rates, thereby enhancing the device's reliability and performance.
Implementation Method 1
reacting the first by-product remaining in the conductive patterns with source gas to form a second by-product of a gas phase
Implementation Method 2
performing an out-gassing process to remove the second by-product
Data Source
AI summary
The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.