Semiconductor Conductive Patterns for Uniform Electroplating

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

In highly integrated semiconductor devices, the resistance and capacitance of metal wiring increase, leading to insufficient electroplating current distribution, resulting in thin or void copper wiring patterns in cell regions due to weak current pathways.

Innovation Solution

A conductive pattern structure with dedicated cell and peripheral regions, featuring a cell current-distributing conductive pattern in the peripheral region, which includes insulating interlayers and conductive patterns to enhance electroplating current distribution, preventing defects and voids in copper wiring.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If copper wiring is formed by electroplating using outer conductive patterns for current distribution, then copper wiring can be formed in the substrate groove, but the electroplating current is insufficient resulting in thin or void copper wiring patterns in cell regions

Engineering Contradiction:
Improvecopper wiring qualityVSAvoidcopper wiring thickness uniformity
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The conductive pattern is divided into two distinct segments: outer conductive patterns for general current distribution and cell current-distributing conductive patterns specifically positioned in peripheral regions to provide additional current pathways to cell regions, thereby ensuring uniform copper deposition without voids

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the substrate are provided with different conductive pattern configurations: the peripheral regions contain both outer and cell current-distributing conductive patterns to ensure sufficient current for cell region electroplating, while inner regions contain only outer conductive patterns, optimizing current distribution locally according to specific needs

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If outer conductive patterns are used for electroplating current distribution, then the structure remains simple, but the current distribution is insufficient in cell regions leading to manufacturing defects

Engineering Contradiction:
Improvecopper wiring formation qualityVSAvoidconductive pattern structure
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The conductive pattern system is segmented into functional units: outer conductive patterns forming a basic distribution network, and additional cell current-distributing conductive patterns strategically placed in peripheral regions to specifically address current insufficiency in cell regions, achieving precise current control

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The outer conductive patterns serve dual functions: providing general current distribution across the substrate and serving as part of the current distribution system for both cell and non-cell regions, while the cell current-distributing conductive patterns specifically enhance current delivery to cell regions

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Ensures uniform and sufficient electroplating current distribution, preventing defects and voids in copper wiring patterns, thereby improving the reliability and performance of semiconductor devices.

Implementation Method 1

electroplating the substrate to fill the groove with copper

Methodology Applied
Scientific EffectElectroplating: Electroplating

Implementation Method 2

the current used to conduct the electroplating is distributed

Methodology Applied
Scientific EffectElectrochemical reduction: Electrolysis

Data Source

PatentUS8592979B2Semiconductor device conductive pattern structures and methods of manufacturing the same
Publication Date: 2013.11.26 SAMSUNG ELECTRONICS CO LTD
  • US8592979B2 patent drawing
  • US8592979B2 patent drawing
  • US8592979B2 patent drawing

AI summary

A conductive pattern structure includes a first insulating interlayer on a substrate, metal wiring on the first insulating interlayer, a second insulating interlayer on the metal wiring, and first and second metal contacts extending through the second insulating interlayer. The first metal contacts contact the metal wiring in a cell region and the second metal contact contacts the metal wiring in a peripheral region. A third insulating interlayer is disposed on the second insulating interlayer. Conductive segments extend through the third insulating interlayer in the cell region and contact the first metal contacts. Another conductive segment extends through the third insulating interlayer in the peripheral region and contacts the second metal contact. The structure facilitates the forming of uniformly thick wiring in the cell region using an electroplating process.