Semiconductor Device with Integrated Conductive Plate for High Current
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Solution Overview
Problem
Conventional semiconductor devices, such as intelligent power modules, often face limitations in current capacity due to the current-carrying constraints of wires, making it difficult to supply large currents required for applications like motor control.
Innovation Solution
A semiconductor device design featuring a substrate with an insulating base and a conductive plate bonded to the base, along with a heat dissipation plate, which allows for direct electrical connections and enhanced current handling capabilities, and includes a lead with islands and recesses for improved bonding and heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If wires are used to connect semiconductor elements to leads, then the device structure is simple and easy to manufacture, but the current-carrying capacity is limited and insufficient for high-current applications
Solution Approach 1:
The patent merges the substrate and lead into an integrated structure where the conductive plate on the substrate directly forms the lead islands. This eliminates the need for separate wire connections, allowing the lead structure itself to carry high currents while maintaining manufacturing simplicity through direct bonding of semiconductor elements to the conductive plate.
Solution Approach 2:
The patent extracts the wire connection function entirely by making the lead islands an integral part of the substrate structure. The conductive plate extends to form the islands that directly receive semiconductor elements, removing the intermediate wire component while preserving electrical connectivity and enhancing current capacity.
2Power
If a conductive plate is added to the substrate to increase current capacity, then the current-carrying capability is improved, but the device structure becomes more complex
Solution Approach 1:
The conductive plate serves multiple functions simultaneously: it provides electrical connection between semiconductor elements and leads, acts as a current-carrying path for high-current applications, and forms the lead islands structure. This multi-functionality increases current capacity without proportionally increasing structural complexity.
Solution Approach 2:
The conductive plate is merged with the substrate to form an integrated base structure. The plate is bonded to the insulating base and extends to form lead islands, combining the substrate support function with the lead connection function in a single integrated component.
3Reliability
If semiconductor elements are mounted on lead islands, then the device structure is simplified, but the bonding strength and reliability are insufficient for high-current applications
Solution Approach 1:
The lead islands are merged with the substrate conductive plate to form a single integrated structure. This provides a larger, more robust bonding area for mounting semiconductor elements directly to the lead islands, enhancing bonding strength and reliability while maintaining structural simplicity through direct bonding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enables the semiconductor device to handle larger currents efficiently, suitable for applications like motor control, while also providing effective heat dissipation and improved bonding strength, thus addressing the current capacity limitations of conventional devices.
Implementation Method 1
the conductive plate is bonded to the first surface of the base and electrically connected to the second electrode of the semiconductor element
Implementation Method 2
a heat dissipation plate bonded to the second surface of the base
Data Source
AI summary
A semiconductor device includes a semiconductor element, a substrate, a lead, and a sealing resin member. The semiconductor element has a first electrode and a second electrode located on opposite sides in the thickness direction. The substrate has an insulating base and a conductive plate. The base has first and second surfaces located on opposite sides in the thickness direction. The conductive plate is bonded to the first surface of the base and electrically connected to the second electrode of the semiconductor element. The lead has an island electrically connected to the first electrode. The sealing resin member covers at least the semiconductor element.