Semiconductor/Solid-State Device Details TRIZ Cases

Notched resin insulating layers on heat dissipation plates enable strong adhesive bonding, solving reliability issues in high-temperature environments.

Re-oxidizing buried insulator side faces to form silicon dioxide layers.

A semiconductor device with a curved side surface prevents metal layer peeling and cracking during dicing, improving die-bonding strength.

Variable wiring widths in the tape carrier overlap section maintain mechanical strength while preventing adjacent bump electrode contact.

A vertical memory device channel includes a lower protrusion connecting to the substrate to enhance mechanical stability.

Interleaving power and ground pads between signal rows shortens redistribution paths to minimize noise interference.

A semiconductor pad covers the via to isolate the MIM capacitor lower electrode from substrate expansion.

Vertical bit line contacts reduce resistance and capacitance, resolving shorting risks from small pitch.

Segmented adhesive layers with chamfered corners in OLED devices decrease moisture permeation rates and mitigate stress-induced substrate deformation.

A fan-out chip packaging method integrates bumped and non-bumped dies using a carrier substrate and dielectric layers with through-holes.

Segmenting silicon nitride films prevents ultraviolet-induced cracking while maintaining tensile stress for carrier mobility.

Exposed metal plates bypass insulative plastic casings to lower junction temperatures and maintain optical output.

A terminal with a dielectric depression and routed trace connects an integrated circuit through lateral conductive paths.

An aluminum oxide film isolates alkaline etching agents from the semiconductor layer, preventing damage while maintaining low forward voltage.

A chip package uses a third conducting layer to surround the substrate periphery and connect to EMI ground pads.

A method electroplates thick metal pads on a substrate using an isolated ground plane to establish electrical contact during deposition.

A wiring board uses a surface groove to restrict bonding material flow toward the component mounting area.

Wet chemical cleaning forms recesses on contact pads, enabling low resistance conductive bumps while eliminating complex bake processes.

A substrate groove dissipates heat and stress to maintain airtightness.

A semiconductor plug structure uses a hard mask layer to prevent over-etching during via formation.

A die stack uses a conductive pillar inserted into a recessed socket within an annular via to create a stable interlocking feature.

A photoelectric conversion device integrates a magnetic layer and an infrared ray absorbing layer to shield electromagnetic noise.

Curved terminals nested within the package body enhance solder joint reliability and support high-density I/O operations without increasing planar footprint.

A dam-like metal pad prevents solder paste flooding and corrosion while reducing mechanical stress on the substrate.

A semiconductor device uses a contact trench to form direct electrical connections between metal layers and doped regions.

A millimeter wave package merges a printed wiring board with a waveguide interface to enable high-frequency signal transmission.

Vias extending into lower metal line openings create a non-planar interface that prevents layer separation and catastrophic failure.

Segmented bit lines reduce capacitance and power dissipation while minimizing write-disturb effects in high-density 3D memory.

Through-holes in the base block allow radiation fins to contact heat pipes directly, resolving thickness constraints while minimizing material consumption.

Attaching a dual-layer thermal sheet to the wafer back surface provides heat dissipation paths without increasing packaging complexity.

Siloxane-modified epoxy and acrylate resins modulate thermal expansion to solve mismatch issues in 3D TSV packages.

A frame-like reinforcement layer with a higher modulus of elasticity protects electronic component connection faces from mechanical stress.

Thin silicon substrate and dual-damascene processing reduce thickness while increasing flexibility for complex 3D routing.

A semiconductor package uses a controlled brazing layer to join a high-conductivity metal block within a base structure.

Rounded driving terminals and an anisotropic conductive film distribute mechanical stress, maintaining electrical connection stability during bending.

Conductive plate bonded to insulating base eliminates wire constraints, allowing high current capacity for motor control applications.

Segmenting the weld member into a thin section absorbs friction heat and pressing load, preventing heat deformation while maintaining structural integrity.

A leadframe with side solderable leads uses a mold groove to expose the lead protrusion for enhanced connectivity.

A two-layer copper silicide barrier retains copper atoms through catalytic decomposition, preventing diffusion into dielectric layers.

Sulfurizing metal wiring creates surface crystals to prevent electron scattering, maintaining low electrical resistance during device miniaturization.

A coiled RFID tag encased in a protective shell enables secure attachment to non-flat surfaces without adhesives.

Segmenting the via into sections with different taper angles alleviates edge stress while minimizing occupied area for high-density mounting.

Dielectric wafer bonding eliminates selective alignment costs by enabling post-bond vias that reduce thermal impedance in flip-chip LEDs.

A semiconductor chip package integrates peripheral contact areas within an encapsulation layer to enable flexible board attachment options.

A clad lead frame with a surrounding groove resolves the contradiction between downsizing and adhesion strength.

Composite lamina thermal conductor traces steer heat flux through anisotropic patterns to manage thermal energy distribution.

A planar support structure anchors terminals within a cavity to reduce wire span and simplify wirebonding layouts.

A buck converter package uses stacked dice on a conductive die attach pad to minimize parasitic capacitances and inductances.

A wirebond traverses a substrate block to electrically couple an integrated circuit with a side-mounted optoelectronic component.

A cooling assembly with alternating metal fiber arrays creates a multiple-porosity structure that enhances heat transfer efficiency.

A redistribution layer supports dies on both surfaces to eliminate thick substrates and reduce package thickness.

External pressure compresses a soft metal layer to reduce average surface roughness below 80 nm for micro-bonding.

Channeled solder forms conductive traces between power bumps, lowering resistance and enabling higher current capacity without increasing package size.

Vertical stacking increases channel width without expanding footprint while suppressing self-heating degradation through dedicated heat dissipation.

Selective inkjet deposition applies repassivation material only to vulnerable areas, reducing waste from blanket spin coating.

Junction point geometry accommodates size changes during bonding, preventing misalignment and broken circuits.

A semiconductor module embeds multiple chips within a standard leadframe package using nested encapsulants and interconnects.

Perforated diamond substrates reduce thermal stress in high-power microwave devices by matching expansion coefficients and providing electrical grounding.

Sidewall transfer processes form sub-resolution wiring line patterns via inverse loading, eliminating photolithography exposure constraints and area penalties.

Edge-mark alignment removes optical shielding portions without back-side etching, resolving trade-offs between measurement precision and manufacturing accuracy.

Metal layers deposited on a ceramic substrate dissipate heat, resolving thermal resistance in LED and CPU packaging.

Gallium or indium solid solution bonds semiconductor bumps to copper pads via vacuum diffusion, eliminating thermal stress from coefficient mismatch.

A stackable heat riser uses elastically coupled conductive blocks to manage thermal pathways across varying component heights.

A support structure with standing members mechanically anchors a semiconductor package without dielectric underfill.

Hydrophilic and hydrophobic surface treatments enable self-aligning semiconductor chip stacks without precise equipment.

A flexible semiconductor package integrates conductive patterns into its touch sensing structure to detect physical alignment with a supporting frame.

Segmented conductive balls with narrow waists shift thermal stress away from connection points, reducing ball fatigue and peeling during thermal cycles.

A heat pipe with varying internal cross-sections equalizes thermal input across the heating element.

Encapsulants and boundary fillers create a planar surface across components of varying thicknesses, enabling reliable redistribution layer formation.

Elastic deformation of a tensioned mesh pushes stuck solder balls out of viscous flux.

A solid state power switch uses a bus bar thermal bridge to conduct heat away from switching devices, preventing cable overheating.

A flexible substrate system couples to a package substrate using conductive adhesive, mitigating solder cracking from thermal expansion.

Annular grooves on a semiconductor base plate retain insulating grease during thermal expansion, preventing overflow and maintaining stable cooling performance.

Relief patterns in insulating layers prevent stress-induced cracking while maintaining capacitance at high frequencies.

Isotropic etching exposes horizontal electrode surfaces inside the via opening, increasing contact area and reducing resistance in BEOL structures.

Laser patterning creates conductive tracks in the encapsulant to resolve interconnect limitations for densely arranged bond pads.

Sputtering aluminum electrodes at elevated wafer temperatures prevents void formation in thick films.

A MEMS processing method forms anti-stiction bumps before cavity creation to reduce sidewall angles and surface area.

A circuit package integrates a metal block adjacent to the electronic circuit with encapsulation material between them.

Counter-stress structures in sacrificial regions balance wafer stress using high-stress materials, reducing bowing without adding masks.

Vertical stacking via conductive vias reduces substrate area occupation while improving signal transmission speed.

Protruding tube portions with annular flexible recesses fit support members, maintaining structural rigidity while minimizing module size.

Redistribution layer interposer structures sequence thermal processes to reduce known-good-die loss risk during semiconductor packaging.

A mounting substrate uses an insulating film layer to shield the reflective aluminum film from environmental damage.

Auxiliary support pillars extend through alternating insulating and sacrificial layers to prevent stack collapse during conductive layer replacement.

A semiconductor package stacks chips vertically using nested encapsulants to protect components and maintain minimal thickness.

A galvanic isolation medium sits between coil windings to enable efficient energy transmission.

Z-interconnects support cantilevered traces over integrated circuits to simplify packaging structures.

Interspersing a protective grid with power lines increases detection complexity, securing integrated circuits against induction loop attacks.

Stepped substrate attachment area secures transparent holder without guide pins to minimize package thickness.

A ceramic wiring substrate uses an internal electroplating conductor layer exposed through a front surface opening to enable reliable metal plating deposition.

A chip card module uses aluminum bond wires and wedge-wedge bonding to connect integrated circuits on a flexible substrate.

Reusable frame matching silicon thermal expansion reduces residual stress and warpage in reconstituted wafers.

A semiconductor package method exposes through-silicon vias by partially etching a bonding layer to reveal solder balls for thermocompression mounting.

A double-contact geometry electrically couples misaligned carbon nanotubes to a second layer, reducing contact resistance.

Simultaneous formation of channel and contact holes via a unified mask layer resolves incomplete depth formation in high aspect ratio structures.

Ionized atom alignment fills damascene structures without pinch-off, maintaining continuous sidewall coverage at sub-20nm nodes.

Sealed housings allow direct submersion of power electronics in engine coolant, eliminating expensive dielectric fluids and complex heat exchangers.

Laser-ablated grooves accommodate thin cutting blades, preventing side surface damage during wafer dicing.