Stepped Crack-Stop Metallization Interface for IC Reliability

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Solution Overview

Problem

Existing crack-stop structures in integrated circuit (IC) products are prone to catastrophic failures due to crack propagation along planar interfaces between metallization layers, leading to separation and rendering the IC product non-functional, which results in material scrapping and reduced yields.

Innovation Solution

The introduction of a novel crack-stop structure with a first metal line layer having openings and a second metallization layer with vias that extend partially into these openings, creating a stepped, non-planar interface, which provides greater resistance to crack propagation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a planar interface is used between metallization layers in crack-stop structures, then the manufacturing process is simple, but crack propagation occurs leading to catastrophic failure

Engineering Contradiction:
Improvecrack propagation resistanceVSAvoidinterface structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies curvature by replacing the planar interface with a non-planar, stepped interface between metallization layers. The via structures extend partially into openings in the lower metal line layer, creating a curved/stepped geometry that disrupts crack propagation paths while maintaining manufacturing feasibility through standard semiconductor fabrication processes.

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Reliability

If vias extend partially into openings in the lower metal line layer, then crack propagation is resisted, but manufacturing precision requirements increase

Engineering Contradiction:
Improvecrack propagation resistanceVSAvoidvia placement precision
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent implements partial action by having vias extend only partially into the openings in the lower metal line layer, rather than completely through or merely touching the surface. This partial extension is sufficient to create the non-planar interface needed for crack resistance while being achievable with standard manufacturing tolerances.

Inventive Principle:
Principle #16Partial or excessive action

3Reliability

If a non-planar stepped interface is created, then separation between layers is prevented, but the manufacturing process becomes more complex

Engineering Contradiction:
Improvelayer separation resistanceVSAvoidfabrication process simplicity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent applies segmentation by dividing the via structure into distinct segments: the via body and the extended portion that protrudes into the opening of the lower metal line layer. This segmented approach creates the non-planar interface needed for preventing layer separation while using standard via formation processes.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS10090258B1Crack-stop structure for an IC product and methods of making such a crack-stop structure
Publication Date: 2018.10.02 GLOBALFOUNDRIES US INC
  • US10090258B1 patent drawing
  • US10090258B1 patent drawing
  • US10090258B1 patent drawing

AI summary

One illustrative crack-stop structure disclosed herein may include a first crack-stop metallization layer comprising a first metal line layer that has a plurality of openings formed therein and a second crack-stop metallization layer positioned above and adjacent the first crack-stop metallization layer, wherein the second crack-stop metallization layer has a second metal line layer and a via layer, and wherein the via layer comprises a plurality of vias having a portion that extends at least partially into the openings in the first metal line layer of the first crack-stop metallization layer so as to thereby form a stepped, non-planar interface between the first metal line layer of the first crack-stop metallization layer and the via layer of the second crack-stop metallization layer.