Semiconductor Device Decoupling Capacitor Stress Relief
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining high-speed operation due to stress concentration in insulating layers near wiring regions, leading to potential cracking and peeling of bonding pad electrodes, and capacitance value attenuation at high signal frequencies.
Innovation Solution
Incorporation of decoupling capacitors with specific configurations, including impurity regions, insulating layers, semiconductor layers, and conductive layers, which facilitate efficient charging and discharging without stress concentration and maintain capacitance values across varying signal frequencies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wiring regions are formed with standard configurations, then device functionality is achieved, but stress concentration occurs in insulating layers leading to cracking and peeling of bonding pad electrodes
Solution Approach 1:
The patent applies local quality by forming a relief pattern in the insulating layer specifically at the wiring region where stress concentration occurs. This relief pattern creates a localized structural modification that reduces stress concentration at the bonding pad electrode interfaces without affecting other regions of the device, thereby preventing cracking and peeling while maintaining overall device functionality.
Solution Approach 2:
The insulating layer is segmented into different regions: a first insulating layer covering the wiring region with a relief pattern, and a second insulating layer covering the bonding pad electrode region. This segmentation allows each layer to be optimized for its specific function - the first layer with stress relief for wiring areas, and the second layer providing protection for bonding pad areas.
2Speed
If decoupling capacitors are added to maintain capacitance at high frequencies, then high-speed operation is enabled, but device complexity increases
Solution Approach 1:
The patent merges the decoupling capacitor structure with existing device components by forming capacitors using the semiconductor substrate and doped regions within the device layer. This integration approach eliminates the need for separate, discrete capacitor components, thereby maintaining high-frequency performance while avoiding significant increases in device complexity.
Solution Approach 2:
The semiconductor substrate and doped regions serve multiple functions: they form the active device regions for circuit operation and simultaneously function as the capacitor electrodes and dielectric structures. This multi-functionality allows decoupling capacitors to be formed without adding separate components, maintaining simplicity while enabling high-speed operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents stress-induced cracking and peeling of bonding pad electrodes while maintaining high capacitance values even at high signal frequencies, ensuring reliable and efficient semiconductor device operation.
Implementation Method 1
a semiconductor device includes a first semiconductor layer on a semiconductor substrate and a second semiconductor layer on the first semiconductor layer... A first conductive layer is on the second semiconductor layer and contacting the second semiconductor layer... capacitance value attenuation at high signal frequencies
Data Source
AI summary
According to one embodiment, a semiconductor device includes a first semiconductor layer on a semiconductor substrate and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer is between the second semiconductor layer and the semiconductor substrate in a first direction. A first conductive layer is on the second semiconductor layer and contacting the second semiconductor layer. A third semiconductor layer is spaced from the second semiconductor layer in a second direction and connected to the first semiconductor layer. A second conductive layer is spaced from the first conductive layer in the second direction and connected to the third semiconductor layer. Each of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer extends lengthwise in a third direction intersecting the first direction and the second direction.