Semiconductor Wiring Sulfurization for Low Resistance
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Solution Overview
Problem
The miniaturization of semiconductor devices requires wiring with low electrical resistance, even as the wiring width is reduced, and existing technologies face challenges in preventing electron scattering on the wiring surface, leading to increased resistance.
Innovation Solution
The semiconductor device incorporates a conductive layer with regions of tungsten or molybdenum sulfides, forming two-dimensional crystals on the surface and interfaces, which reduce electron scattering and maintain low resistance by sulfurizing the metal material used for the conductive layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If wiring width is reduced for miniaturization, then device size is reduced, but electrical resistance increases due to electron scattering on the wiring surface
Solution Approach 1:
The patent applies local quality by creating a two-dimensional crystal structure specifically on the wiring surface and interfaces, rather than changing the entire wiring structure. This localized crystalline region reduces electron scattering at the critical surface area where electrons flow, thereby maintaining low electrical resistance even as the overall wiring dimensions are reduced for miniaturization
Solution Approach 2:
The patent employs composite materials by combining metal materials (such as tungsten or copper) with sulfur to form metal sulfide two-dimensional crystals. This composite approach creates a unique surface structure that exhibits both the electrical conductivity of metals and the electron-scattering-reducing properties of crystalline structures, effectively addressing the resistance increase problem in miniaturized wirings
2Ease of manufacture
If conventional metal materials are used in conductive layers, then manufacturing is simple, but electron scattering on the surface increases electrical resistance
Solution Approach 1:
The patent applies parameter changes by modifying the surface structure parameter of the metal material through sulfurization treatment. This chemical process transforms the metal surface into a two-dimensional crystal structure, fundamentally changing the surface morphology and electronic properties without requiring complete replacement of the manufacturing process. The result is reduced electron scattering and lower electrical resistance while maintaining compatibility with existing metal deposition techniques
Solution Approach 2:
The invention applies local quality by selectively treating only the surface and interface regions of the metal conductive layer with sulfur, rather than changing the bulk material properties. This localized modification creates a two-dimensional crystal structure precisely where electron scattering occurs most frequently, maintaining low electrical resistance without complicating the overall manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the achievement of low electrical resistance in semiconductor wiring even with reduced widths, by forming good interfaces and preventing electron scattering, thus enhancing the performance of miniaturized semiconductor devices.
Implementation Method 1
sulfurizing the metal material used for the conductive layer
Implementation Method 2
forming two-dimensional crystals on the surface and interfaces
Data Source
AI summary
A semiconductor device includes a conductive layer extending in a first direction, including a first surface, a second surface facing the first surface in a second direction intersecting the first direction, a third surface, and a fourth surface facing the third surface in a third direction intersecting the first direction and the second direction, and containing a first element which is at least one element of tungsten (W) or molybdenum (Mo); a first region disposed on a first surface side of the conductive layer, containing a second element which is at least one element of tungsten (W) or molybdenum (Mo), and a third element which is at least one element of sulfur (S), selenium (Se), or tellurium (Te), and including a first crystal; and a second region disposed on a second surface side of the conductive layer, containing the second element and the third element, and including a second crystal.