Semiconductor Structure With Conductive Strip And Dielectric Plug
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Solution Overview
Problem
Current semiconductor memory devices face challenges in achieving high element density and small size while maintaining excellent properties and stability, particularly in the formation of three-dimensional structures with multiple stacked planes.
Innovation Solution
A semiconductor structure comprising a conductive layer, conductive strip, and dielectric layer, where the conductive strip is formed using a second conductive material with different conductivity characteristics, supported by a dielectric layer and conductive plug, and a manufacturing method involving hole formation, trench filling, and dielectric plug creation to prevent bending and ensure uniform material properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional memory device structures are used, then manufacturing is simpler, but element density and storage capacity are limited
Solution Approach 1:
The patent transitions from planar two-dimensional memory structures to three-dimensional stacked structures with multiple planes. Conductive layers, dielectric layers, and conductive plugs are stacked vertically to create multi-plane memory arrays, enabling higher element density by utilizing the third dimension (vertical stacking) rather than only expanding horizontally.
Solution Approach 2:
The patent implements nested structures where conductive plugs are positioned within holes formed through stacked conductive and dielectric layers. The conductive plugs are surrounded by dielectric material, which is in turn surrounded by conductive layers, creating a nested configuration that maximizes space utilization and element density within the three-dimensional structure.
2Quantity of substance
If three-dimensional stacked structures are created, then storage capacity increases, but manufacturing precision and stability become more difficult to maintain
Solution Approach 1:
The patent performs preliminary actions by forming conductive plugs and filling holes with dielectric material before completing the full stack structure. The conductive plugs are prepared in advance within the holes, and dielectric layers are deposited beforehand to provide structural support. This preliminary preparation ensures proper alignment and stability when the complete multi-plane stacked structure is formed, preventing bending and maintaining manufacturing precision.
Solution Approach 2:
The patent introduces dielectric layers and dielectric plugs as intermediary materials between conductive layers and conductive plugs. These dielectric components serve as mediators that provide mechanical support, electrical isolation, and structural stability to the three-dimensional stacked configuration, preventing bending issues and ensuring reliable electrical connections while maintaining high storage capacity.
3Reliability
If conductive materials with different conductivity characteristics are used, then electrical performance is optimized, but material uniformity becomes more challenging
Solution Approach 1:
The patent applies local quality by using different conductive materials in different regions and layers of the memory structure. First conductive material is used for conductive layers, while second conductive material with different conductivity characteristics is used for conductive plugs. This localized material selection optimizes electrical performance for specific functional requirements (word lines vs. bit lines) while maintaining overall structural integrity and controlled material uniformity within each material type.
Data Source
AI summary
A semiconductor structure and a manufacturing method of the same are disclosed. The semiconductor structure includes a conductive layer, a conductive strip, a dielectric layer, and a conductive element. The conductive layer has a first conductive material. The conductive strip is in the same level as the conductive layer and has a second conductive material. The second conductive material is adjoined with the first conductive material having a conductivity characteristic different from a conductivity characteristic of the second conductive material. The conductive element crisscrosses the conductive strip and separated from the conductive strip by the dielectric layer.