Semiconductor Device Conductor Pillar Heat Dissipation

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Solution Overview

Problem

Power amplifiers in wireless communication devices face challenges in improving output power and reducing size while effectively dissipating heat, as existing semiconductor devices are inefficient in heat dissipation.

Innovation Solution

A semiconductor device design featuring transistors with conductive operating electrodes and a conductor pillar for external connection, where the contact regions between the semiconductor regions and operating electrodes are arranged to enhance heat dissipation by optimizing the positional relationship and thermal conductivity, allowing for efficient heat spread and dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If a conventional semiconductor device structure is used, then the device is simple to manufacture, but heat dissipation is inefficient

Engineering Contradiction:
Improveheat dissipation efficiencyVSAvoiddevice structure complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent transitions from planar contact regions to three-dimensional conductor pillars that extend vertically through multiple layers. This dimensional change creates additional thermal conduction pathways from the semiconductor region through the conductor pillar to the external connection, significantly improving heat dissipation efficiency while maintaining manufacturing feasibility through standard semiconductor fabrication processes.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The conductor pillar is constructed as a composite structure containing both conductive material for electrical connection and thermally conductive material for heat dissipation. This composite approach allows simultaneous optimization of electrical performance and thermal management, resolving the contradiction between simple structure and effective heat dissipation.

Inventive Principle:
Principle #40Composite materials

2Power

If the bump width is narrowed above the intrinsic operation part, then the electrical performance is improved, but the heat dissipation area is reduced

Engineering Contradiction:
Improveoutput powerVSAvoidheat dissipation capability
Core Design Contradiction:
PowerVSTemperature

Solution Approach 1:

The conductor pillar extends vertically into the third dimension, providing thermal conduction pathways that are not constrained by the narrowed horizontal bump width. This vertical extension allows heat to be conducted away from the intrinsic operation part effectively even when the horizontal contact area is minimized for optimal electrical performance.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The conductor pillar is divided into multiple segments along its height, with different portions serving different functions: the lower portion provides electrical connection to the semiconductor region, the middle portion conducts heat away from the operation part, and the upper portion provides external connection. This segmentation allows simultaneous optimization of electrical and thermal performance.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design significantly improves heat dissipation capabilities, reducing temperature rise and ensuring effective heat spread, thus enhancing the performance and efficiency of power amplifiers in wireless communication devices.

Implementation Method 1

a plurality of operating electrodes made of a conductive material having a higher thermal conductivity than a thermal conductivity of the semiconductor regions

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS11158592B2Semiconductor device
Publication Date: 2021.10.26 MURATA MFG CO LTD
  • US11158592B2 patent drawing
  • US11158592B2 patent drawing
  • US11158592B2 patent drawing

AI summary

Transistors including semiconductor regions where operating current flows are provided above a substrate. Operating electrodes of conductive material having thermal conductivity higher than the semiconductor regions and contacting the semiconductor regions to conduct operating current to the semiconductor regions are disposed. A conductor pillar for external connection contains contact regions where the semiconductor regions and the operating electrodes contact, and is electrically connected to the operating electrodes. The contact regions are disposed in a first direction. Each contact region has a planar shape long in a second direction orthogonal to the first direction. A first average distance, obtained by averaging distances in the second direction from each end portion of the contact region in the second direction to an edge of the conductor pillar across the contact regions, exceeds an average distance value in a height direction from the contact region to a top surface of the conductor pillar.