Semiconductor Contact Hole Lengthening for Memory Reliability
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Solution Overview
Problem
The existing semiconductor structure layout faces challenges with low reliability due to the increasing density of memory, which affects the performance and yield rate of semiconductor devices, particularly in the design of high-density memory chips.
Innovation Solution
A semiconductor structure design that includes an active region pattern, a specific type of grid patterns overlapping with the active region, and a metal layer pattern extending along the same direction, with contact hole patterns connecting the metal layer to the active region on both sides, optimizing the contact area and improving reliability by increasing the length of the contact holes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If memory density is increased to reduce chip area, then chip area is reduced and cost decreases, but reliability of the semiconductor structure deteriorates
Solution Approach 1:
The patent transitions from a conventional two-dimensional planar contact hole arrangement to a three-dimensional structure by extending contact holes vertically through multiple layers (through-hole contacts connecting different metal layers via intermediate layers). This vertical dimensionality increase allows maintaining reliability through enhanced contact area and multiple connection paths while achieving higher memory density in the horizontal plane
Solution Approach 2:
The patent implements a nested multi-layer structure where contact holes are embedded within intermediate layers that are themselves nested within metal layers. The contact hole patterns are positioned within recesses of intermediate layers, creating a nested configuration that maximizes space utilization and connection reliability without increasing horizontal footprint
2Reliability
If contact hole length is increased to improve reliability, then reliability improves, but manufacturing complexity increases
Solution Approach 1:
The patent divides the contact structure into multiple segmented components: upper contact holes, intermediate layers with embedded contact holes, lower contact holes, and filling materials. Each segment can be manufactured and processed separately through sequential deposition and etching steps, reducing the complexity of forming the complete deep contact structure in a single operation
Solution Approach 2:
The patent performs preliminary actions by pre-forming intermediate layers with embedded contact hole patterns before forming the final contact holes. The intermediate layers are deposited and patterned in advance, creating pre-defined pathways and structures that guide subsequent contact hole formation, thereby simplifying the overall manufacturing process
Data Source
AI summary
A semiconductor structure and a memory are provided. The semiconductor structure includes an active region pattern, a first type of grid patterns overlapping with the active region pattern and extending along the first direction, and a metal layer pattern extending along the first direction. The metal layer pattern is in contact with an active region pattern arranged on both sides of the first type of grid patterns through a contact hole pattern.