Semiconductor Contact Isolation via Etch Control Layers
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Solution Overview
Problem
The increasing integration of semiconductor devices complicates the process of forming contacts and interconnection lines, reducing the photo process margin and leading to complexity in highly-scaled semiconductor manufacturing.
Innovation Solution
A method involving the formation of isolated contact filling portions and an etch control portion, where the contact filling portions fill contact holes in a support layer, and an interconnection layer is formed to create interconnection patterns with controlled etch rates, allowing for increased photo process margins between contacts and interconnection lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the integration of semiconductor device increases, then the device functionality and capacity improve, but the photo process margin between contacts and interconnection lines decreases
Solution Approach 1:
The method forms isolated contact filling portions and etch control portions before forming the interconnection layer. The etch control portions are prepared in advance to surround the contact filling portions, establishing a controlled structure that will regulate subsequent etching processes and ensure adequate photo process margins
Solution Approach 2:
The method changes the etch rate parameter by using etch control portions made of different materials or with different properties than the contact filling portions. This allows selective etching where the etch control portions etch at a different rate, creating the necessary spacing and margins for photo processes while maintaining high device integration
2Length of moving object
If the design rule for components decreases, then the device miniaturization improves, but the process complexity of forming contacts and interconnection lines increases
Solution Approach 1:
The method segments the contact structure into isolated contact filling portions surrounded by etch control portions. This segmentation allows independent control of each contact region, simplifying the overall patterning process by creating clearly defined zones that can be processed separately with standard photo lithography techniques
Solution Approach 2:
The etch control portions act as intermediary structures between the contact filling portions and the interconnection layer. These intermediary elements facilitate the formation process by providing a controlled interface that simplifies the etching of interconnection lines while maintaining miniaturized dimensions
3Reliability
If the photo process margin is increased, then the manufacturing reliability improves, but the component density decreases
Solution Approach 1:
The method applies local quality by making the etch control portions surround only the contact filling portions in specific locations. This localized approach provides enhanced photo process margins and manufacturing reliability at critical contact regions while maintaining high component density in other areas of the device
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the photo process margin and reduces short-circuit issues between interconnection patterns, improving the manufacturing process complexity and reliability of highly-scaled semiconductor devices.
Implementation Method 1
controlling an etch rate of the isolated contact filling portions by the etch control portion
Implementation Method 2
forming interconnection patterns by photo-etching the interconnection layer, the isolated contact filling portions, and the etch control portion
Data Source
AI summary
Provided is a method of manufacturing a semiconductor device. The method includes forming isolated contact filling portions and an etch control portion, the isolated contact filling portions filling contact holes defined in a support layer and are spaced apart from each other in a first direction and a second direction perpendicular to the first direction and the etch control layer surrounding the isolated contact filling portions, forming an interconnection layer on the isolated contact filling portions and the etch control portion, and forming interconnection patterns by photo-etching the interconnection layer, the isolated contact patterns, and the etch control portion, the interconnection patterns being relatively narrow in the first direction and relatively wide in the second direction.